LSC65R380HT
/
LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT
LonFET
Lonten N-channel 650V, 11A, 0.38Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
700V
0.38Ω
30A
14.7 nC
The resulting
Power MOSFET is fabricated using
advanced super junction technology.
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 14.7nC)
100% UIS tested
RoHS compliant
D
TO-263
TO-252
TO-220
TO-220MF
TO-262
G
Applications
S
N-Channel MOSFET
Pb
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche current, repetitive
3)
Power Dissipation TO-220/TO-252/ TO-262/ TO-263
( TC = 25° )
C
- Derate above 25°
C
P
D
Power Dissipation TO-220MF
( T
C
= 25° )
C
31.8
0.26
T
J
, T
STG
I
S
I
S,pulse
-55 to +150
11
30
W
W/°
C
°
C
A
A
- Derate above 25°
C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
I
DM
V
GSS
E
AS
I
AR
V
DSS
I
D
Symbol
Value
650
11
8.2
30
±30
245
11
90
0.72
Unit
V
A
A
A
V
mJ
A
W
W/°
C
Version 1.0
2018
1
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LSC65R380HT
/
LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT
LonFET
Thermal Characteristics TO-252/TO-220/ TO-262/ TO-263
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
1.39
45
Unit
°
C/W
°
C/W
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
3.9
53
Unit
°
C/W
°
C/W
Package Marking and Ordering Information
Device
LSC65R380HT
LSD65R380HT
LSE65R380HT
LSF65R380HT
LSG65R380HT
Device Package
TO-220
TO-220MF
TO-263
TO-262
TO-252
Marking
LSD65R380HT
LSD65R380HT
LSE65R380HT
LSF65R380HT
LSG65R380HT
Units/Tube
50
50
50
50
800
2500
Units/Tube
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=650 V, V
GS
=0 V,
T
j
= 25°
C
T
j
= 125°
C
650
2.5
-
3.5
-
4.5
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=5.5 A
T
j
= 25°
C
T
j
= 150°
C
0.33
0.9
5.7
0.38
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
V
DD
= 400V, I
D
= 5.5A
R
G
= 10Ω, V
GS
=15V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
560
216
1.2
20.6
32
62
-
-
-
-
-
-
ns
pF
Version 1.0
2018
2
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LSC65R380HT
/
LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT
LonFET
Fall time
t
f
-
12.5
-
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V, I
D
=5.5A,
V
GS
=0 to 10 V
-
-
-
-
4.8
4.7
14.7
6
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=5.5A
V
R
=400 V, I
F
=5.5A,
dI
F
/dt=100 A/μs
-
-
-
-
1.2
234
4.4
18.7
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 3A, V
DD
= 60V, Starting T
j
= 25°
C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 1.0
2018
3
www.lonten.cc
LSC65R380HT
/
LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Common Source
T
c
= 25°C
Pulse test
V
GS
=7V
V
GS
=10V
V
GS
=6.5V
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
Drain current I
D
(A)
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Drain current I
D
(A)
V
GS
=6V
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
1.3
1.2
1.1
V
th
, (Normalized)
Gate threshold voltage
T
c
= 25°C
Pulse test
1
0.9
0.8
0.7
0.6
0.5
-60
-40
-20
0
20
40
60
80
100
120
140
160
I
DS
=0.25 mA
Pulse test
R
DS (on)
(Ω)
V
GS
= 10V
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
1.2
Figure 6. On-Resistance vs. Temperature
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
1.1
2
1
1.5
0.9
1
0.8
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
0.5
V
GS
=10 V
I
DS
=5.5 A
Pulse test
0.7
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
-60
-40
-20
0
20
40
60
80
100
120
140
160
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
Version 1.0
2018
4
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LSC65R380HT
/
LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
C
oss
Notes:
f = 1 MHz
V
GS
=0 V
Gate-Source Voltage V
GS
(V)
Capacitance (pF)
I
D
= 5.5A
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-220/TO-252/ TO-262/ TO-263
Limited by R
ds(on)
Drain current I
D
(A)
1ms
DC
Drain current I
D
(A)
10us
100us
10us
1ms 100us
DC
Limited by R
ds(on)
Notes:
T
C
=25℃
T
J
=150℃
Single Pulse
Notes:
T
C
=25℃
T
J
=150℃
Single Pulse
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Drain power dissipation P
D
(W)
Figure 10.2 Power Dissipation vs. Temperature
TO-220/TO-252/ TO-262/ TO-263
Drain power dissipation P
D
(W)
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 1.0
2018
5
www.lonten.cc
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