LSB65R099GF/LSD65R099GF/LSE65R099GF
LonFET
Lonten N-channel 650V, 40A, 0.099Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
700V
0.099Ω
120A
66nC
The resulting
Power MOSFET is fabricated using
advanced super junction technology.
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 66nC)
100% UIS tested
RoHS compliant
TO-247
TO-220MF
TO-263
D
G
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Power Dissipation TO-247 ( T
C
= 25° )
C
- Derate above 25°
C
Power Dissipation
TO-220MF ( T
C
= 25° )
C
- Derate above 25°
C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
V
DSS
I
D
Symbol
Value
650
40
26
120
±30
1000
278
2.22
35
0.28
-55 to +150
40
120
Unit
V
A
A
A
V
mJ
W
W/°
C
W
W/°
C
°
C
A
A
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2017
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LSB65R099GF/LSD65R099GF/LSE65R099GF
LonFET
Thermal Characteristics TO-247/TO-263
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
0.45
62
Unit
°
C/W
°
C/W
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
3.6
62.5
Unit
°
C/W
°
C/W
Package Marking and Ordering Information
Device
LSB65R099GF
LSD65R099GF
LSE65R099GF
Device Package
TO-247
TO-220MF
TO-263-2L
Marking
LSB65R099GF
LSD65R099GF
LSE65R099GF
Units/Tube
30
50
800
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25 mA
V
DS
=650 V, V
GS
=0 V,
T
j
= 25°
C
T
j
= 125°
C
650
2.0
-
3.0
-
4.0
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=20 A
T
j
= 25°
C
T
j
= 150°
C
0.086
0.22
2.0
0.099
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 400 V, I
D
= 20 A
R
G
= 10 Ω, V
GS
=10 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
-
3000
2500
10
31.2
43.8
151.4
12.3
-
-
-
-
-
-
-
ns
pF
Gate charge characteristics
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2017
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LSB65R099GF/LSD65R099GF/LSE65R099GF
LonFET
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V, I
D
=20 A,
V
GS
=0 to 10 V
-
-
-
-
17.8
25
66
6.0
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=20 A
V
R
=50 V, I
F
=20 A,
dI
F
/dt=100 A/μs
-
-
-
-
-
198
3.1
14.9
1.2
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 8A, V
DD
=60V, Starting T
j
= 25°
C.
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2017
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LSB65R099GF/LSD65R099GF/LSE65R099GF
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
V
GS
=7V
Drain current I
D
(A)
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
V
GS
=6.5V
V
GS
=6V
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Drain current I
D
(A)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10 V
T
c
= 25°C
Pulse test
V
th
, (Normalized)
Gate threshold voltage
R
DS (on)
(Ω)
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
V
GS
=10 V
I
DS
=11.5 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
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2017
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LSB65R099GF/LSD65R099GF/LSE65R099GF
LonFET
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characterist
C
iss
C
oss
Gate-Source Voltage V
GS
(V)
Capacitance (pF)
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
rss
Notes:
f = 1 MHz
V
GS
=0 V
I
D
= 10 A
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Limited by R
10us
DS(on)
Figure 9.2 Maximum Safe Operating Area
TO-247/TO-263
10us
100us
Limited by R
DS(on)
100us
1ms
Drain current I
D
(A)
Drain current I
D
(A)
1ms
DC
DC
Notes:
T = 25°C
c
j
Notes:
T = 25°C
c
j
T = 150°C
Single Pulse
T = 150°C
Single Pulse
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Drain power dissipation P
D
(W)
Figure 10.2 Power Dissipation vs. Temperature
TO-247/TO-263
Drain power dissipation P
D
(W)
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 2.0
2017
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