LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT
LonFET
Lonten N-channel 600V, 25A, 0.125Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
650V
0.125Ω
75A
36nC
The resulting
Power MOSFET is fabricated using
advanced super junction technology.
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 36nC)
100% UIS tested
RoHS compliant
TO-247
TO-220MF
TO-263
TO-220
D
G
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Power Dissipation
25° )
C
Power Dissipation
TO-247/ TO-263/ TO-220
(
Symbol
V
DSS
I
D
Value
600
25
16.3
Unit
V
A
A
A
V
mJ
mJ
W
W/°
C
W
W/°
C
°
C
A
A
I
DM
V
GSS
E
AS
E
AR
T
C
=
P
D
75
±30
800
0.4
216
1.73
34.2
0.27
- Derate above 25°
C
TO-220MF ( T
C
= 25° )
C
- Derate above 25°
C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
-55 to +150
25
75
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LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT
LonFET
Thermal Characteristics TO-247/TO-263/ TO-220
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
0.58
59
Unit
°
C/W
°
C/W
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
3.7
75
Unit
°
C/W
°
C/W
Package Marking and Ordering Information
Device
LSB60R125HT
LSC60R125HT
LSD60R125HT
LSE60R125HT
Device Package
TO-247
TO-220
TO-220MF
TO-263-2L
Marking
LSB60R125HT
LSC60R125HT
LSD60R125HT
LSE60R125HT
Units/Tube
30
50
50
800
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25 mA
V
DS
=600 V, V
GS
=0 V,
T
j
= 25°
C
T
j
= 125°
C
600
2.5
-
3.5
-
4.5
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=12.5 A
T
j
= 25°
C
T
j
= 150°
C
0.115
0.29
4.5
0.125
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 400 V, I
D
= 12.5 A
R
G
= 10 Ω, V
GS
=15 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
-
2353
370
3.2
21
46
84
13.5
-
-
-
-
-
-
-
ns
pF
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LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT
LonFET
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V, I
D
=12.5 A,
V
GS
=0 to 10 V
-
-
-
-
11
11
36
5.2
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=12.5 A
V
R
=400 V, I
F
=12.5 A,
dI
F
/dt=100 A/μs
-
-
-
-
1.2
334
4.6
28
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 6A, V
DD
=60V, Starting T
j
= 25°
C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
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LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Common Source
T
c
= 25°C
Pulse test
V
GS
=6.5V
Figure 2. Transfer Characteristics
V
GS
=7V
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
V
GS
=6V
Drain current I
D
(A)
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Drain current I
D
(A)
V
GS
=10V
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10 V
T
c
= 25°C
Pulse test
V
th
, (Normalized)
Gate threshold voltage
R
DS (on)
(Ω)
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
V
GS
=10 V
I
DS
=12.5 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
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LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
C
oss
Notes:
f = 1 MHz
V
GS
=0 V
Gate-Source Voltage V
GS
(V)
Capacitance (pF)
I
D
= 12.5 A
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-247/TO-263/ TO-220
10us
10us
Drain current I
D
(A)
100us
1ms
Limited by R
Drain current I
D
(A)
100us
1ms
Limited by R
Notes:
T = 25°C
c
j
DS(on)
DC
DS(on)
DC
Notes:
T = 25°C
c
j
T = 150°C
Single Pulse
T = 150°C
Single Pulse
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Drain power dissipation P
D
(W)
Figure 10.2 Power Dissipation vs. Temperature
TO-247/TO-263/ TO-220
Drain power dissipation P
D
(W)
Case temperature T
c
(°C)
Case temperature T
c
(°C)
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