LSB65R125HT/LSC65R125HT/LSD65R125HT/
LSE65R125HT/LSNC65R125HT/LSF65R125HT
LonFET
Lonten N-channel 650V, 25A, 0.125Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated using
advanced super junction technology.
The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
700V
0.125Ω
75A
36nC
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 36nC)
100% UIS tested
RoHS compliant
D
TO-262
DFN8×8
TO-247
TO-220MF
TO-263
TO-220
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Power Dissipation
TO-247/ TO-263/ TO-220/DFN8×8
( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-220MF ( T
C
= 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
216
1.73
34.2
0.27
-55 to +150
25
75
W
W/°C
W
W/°C
°C
A
A
I
DM
V
GSS
E
AS
E
AR
V
DSS
I
D
Symbol
Value
650
25
16.3
75
±30
800
0.4
Unit
V
A
A
A
V
mJ
mJ
Version 1.4,Mar-2020
1
www.lonten.cc
LSB65R125HT/LSC65R125HT/LSD65R125HT/
LSE65R125HT/LSNC65R125HT/LSF65R125HT
LonFET
Thermal Characteristics TO-247/TO-263/ TO-220/DFN8×8
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
0.58
59
260
Unit
°C/W
°C/W
°C
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
3.7
75
260
Unit
°C/W
°C/W
°C
Package Marking and Ordering Information
Device
LSB65R125HT
LSC65R125HT
LSD65R125HT
LSE65R125HT
LSNC65R125HT
LSF65R125HT
Device Package
TO-247
TO-220
TO-220MF
TO-263
DFN8×8
TO-262
Marking
LSB65R125HT
LSC65R125HT
LSD65R125HT
LSE65R125HT
LSNC65R125HT
LSF65R125HT
50
Units/Tube
30
50
50
800
3000
Units/Reel
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25 mA
V
DS
=650 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
650
2.5
Typ.
-
3.5
Max.
-
4.5
Unit
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=12.5 A
T
j
= 25°C
T
j
= 150°C
0.115
0.29
1.4
0.125
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
C
iss
C
oss
C
rss
t
d(on)
V
DD
= 400 V, I
D
= 12.5 A
V
DS
= 100 V, V
GS
= 0 V,
f = 250 kHz
-
-
-
2230
85.7
1.96
21
-
-
-
-
pF
Version 1.4,Mar-2020
Turn-on delay time
2
-
www.lonten.cc
LSB65R125HT/LSC65R125HT/LSD65R125HT/
LSE65R125HT/LSNC65R125HT/LSF65R125HT
LonFET
Rise time
Turn-off delay time
Fall time
t
r
t
d(off)
t
f
R
G
= 10 Ω, V
GS
=15 V
-
-
-
46
84
13.5
-
-
-
ns
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V, I
D
=12.5 A,
V
GS
=0 to 10 V
-
-
-
-
11
11
36
5.2
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=12.5 A
V
R
=400 V, I
F
=12.5 A,
dI
F
/dt=100 A/μs
-
-
-
-
1.2
334
4.6
28
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 6A, V
DD
=60V, Starting T
j
= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 1.4,Mar-2020
3
www.lonten.cc
LSB65R125HT/LSC65R125HT/LSD65R125HT/
LSE65R125HT/LSNC65R125HT/LSF65R125HT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Common Source
T
c
= 25°C
Pulse test
V
GS
=6.5V
V
GS
=10V
V
GS
=6V
Figure 2. Transfer Characteristics
V
GS
=7V
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10 V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=12.5 A
Pulse test
Version 1.4,Mar-2020
Junction temperature T
j
(°C)
4
Junction temperature T
j
(°C)
www.lonten.cc
LSB65R125HT/LSC65R125HT/LSD65R125HT/
LSE65R125HT/LSNC65R125HT/LSF65R125HT
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
Notes:
f = 250 kHz
V
GS
=0 V
C
oss
I
D
= 12.5 A
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-247/TO-263/ TO-220/DFN8×8
10us
100us
1ms
Limited by R
DS(on)
DC
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
10us
100us
1ms
Limited by R
DS(on)
DC
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Figure 10.2 Power Dissipation vs. Temperature
TO-247/TO-263/ TO-220/DFN8×8
Version 1.4,Mar-2020
Case temperature T
c
(°C)
5
Case temperature T
c
(°C)
www.lonten.cc
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
