LND10N65/LNC10N65/LNE10N65/LNF10N65
Lonten N-channel 650V, 10A Power MOSFET
Description
The Power MOSFET is fabricated using the
advanced
planer
VDMOS
technology.
The
resulting device has low conduction resistance,
superior switching performance and high avalanche
energy.
Product Summary
V
DSS
I
D
R
DS(on),max
Q
g,typ
650V
10A
1.0Ω
34.2 nC
Features
Low R
DS(on)
Low gate charge (typ. Q
g
= 34.2 nC)
100% UIS tested
RoHS compliant
G
S
N-Channel MOSFET
Pb
TO-262
TO-263
TO-220
TO-220F
D
Applications
Power factor correction.
Switched mode power supplies.
LED driver.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Peak diode recovery dv/dt
3)
Power Dissipation
TO-220F ( T
C
= 25° )
C
Derate above 25°
C
Power Dissipation
TO-220\ TO-262\ TO-263 ( T
C
= 25° )
C
Derate above 25°
C
Operating junction and storage temperature range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
130
1.04
-55 to +150
10
40
W
W/°
C
°
C
A
A
I
DM
V
GSS
E
AS
dv/dt
V
DSS
I
D
Symbol
Value
650
10
6.3
40
±30
500
5
40
0.32
Unit
V
A
A
A
V
mJ
V/ns
W
W/°
C
Thermal Characteristics
Parameter
Thermal resistance, Junction-to-case
Thermal resistance, Junction-to-ambient
Symbol
R
θJC
R
θJA
Value
TO-220F
3.13
110
TO-220\TO-251\TO-252
0.96
62.5
Unit
°
C/W
°
C/W
Version 1.0
2018
1
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LND10N65/LNC10N65/LNE10N65/LNF10N65
Package Marking and Ordering Information
Device
LNC10N65
LND10N65
LNE10N65
LNF10N65
Device Package
TO-220
TO-220F
TO-263
TO-262
Marking
LNC10N65
LND10N65
LNE10N65
LNF10N65
Units/Tube
50
50
50
50
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25 mA
V
DS
=650 V, V
GS
=0 V,
T
j
= 25°
C
T
j
= 125°
C
650
2
-
-
-
4
V
V
-
-
-
-
-
-
1
100
μA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=5A
-
-
0.81
100
-100
1.0
nA
nA
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 325 V, I
D
= 10 A
R
G
= 10 Ω, V
GS
=15 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
-
1622
144.2
6.8
14.16
34.64
65.72
16.04
-
-
-
-
-
-
-
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=520 V, I
D
=10 A,
V
GS
=0 to 10 V
-
-
-
-
8.8
12.89
34.2
5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=10 A
V
R
=325 V, I
F
=10 A,
dI
F
/dt=100 A/μs
-
-
-
-
-
418.8
3.40
16.28
1.5
-
-
-
V
ns
μC
A
Notes:
1. Pulse width limited by maximum junction temperature.
2. L=10mH, I
AS
= 10A, Starting T
j
= 25°
C.
3. I
SD
= 10A, di/dt≤100A/us, V
DD
≤BV
DS
, Starting T
j
= 25°
C.
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2018
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LND10N65/LNC10N65/LNE10N65/LNF10N65
Electrical Characteristics Diagrams
Figure 1. Typical Output Characteristics
Figure 2. Transfer Characteristics
V
GS
=10V
V
GS
=9V
T
c
= 25°C
I
D
, Drain current (A)
V
GS
=7V
V
GS
=6V
V
GS
=5.5V
I
D
, Drain current (A)
V
GS
=8V
T
c
= 150°C
V
GS
=4.5V
V
DS
,Drain−source voltage (V)
V
GS
,Gate−source voltage (V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
R
DS (on)
, Drain-Source
On-Resistance
V
GS
= 10 V
T
c
= 25°C
Pulse test
V
th
, (Normalized)
Gate threshold voltage
(Ω)
I
DS
=0.25 mA
Pulse test
I
D
,Drain current (A)
T
j
,Junction temperature (°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=5 A
Pulse test
T
j
,Junction temperature (°C)
T
j
,Junction temperature (°C)
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2018
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LND10N65/LNC10N65/LNE10N65/LNF10N65
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
V
GS
,Gate-Source Voltage (V)
Capacitance (pF)
C
iss
V
DS
=480V
Notes:f = 1 MHz,V
GS
=0 V
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
oss
I
D
= 10 A
C
rss
V
DS
,Drain-Source Voltage (V)
Q
G
,Total Gate Charge (nC)
Figure 9. Maximum Safe Operating Area
TO-220F
Figure 10. Maximum Safe Operating Area
TO-220/ TO-262/TO-263
100us
100us
I
D
,Drain current (A)
10ms
DC
Limited by R
Notes:
T = 25°C
c
j
DS(on)
1ms
I
D
,Drain current (A)
1ms
10ms
Limited by R
Notes:
T = 25°C
c
j
DC
DS(on)
T = 150°C
Single Pulse
T = 150°C
Single Pulse
V
DS
,Drain-Source Voltage (V)
V
DS
,Drain-Source Voltage (V)
Figure 11. Power Dissipation vs. Temperature
TO-220F
Figure 12. Power Dissipation vs. Temperature
TO-220/ TO-262/TO-263
P
D
,power dissipation, (W)
T
c
,Case temperature (°C)
P
D
,power dissipation, (W)
T
c
,Case temperature (°C)
Version 1.0
2018
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LND10N65/LNC10N65/LNE10N65/LNF10N65
Figure 13. Continuous Drain Current vs. Temperature
Figure 14. Body Diode Transfer Characteristics
I
SD
,Reverse Drain Current
（A）
I
D
,Drain current (A)
T
c
= 150°
C
T
c
= 25°C
T
c
,Case temperature (°C)
V
SD
,Source-Drain Voltage (V)
Figure 15 Transient Thermal Impedance, Junction to Case, TO-220F
Normalized Transient
Thermal Resistance
θJC
P
DM
t
Z
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
Duty = t/T
T
Z (t)=3.31°C/W Max.
θJC
t ,Pulse Width (s)
Figure 16. Transient Thermal Impedance, Junction to Case, TO-220/ TO-262/TO-263
Normalized Transient
Thermal Resistance
P
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
DM
t
Duty = t/T
T
Z (t)=0.96°C/W Max.
θJC
Z
θJC
t ,Pulse Width (s)
Version 1.0
2018
5
www.lonten.cc
NXP MCU
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