LSGC15R085W3\LSGE15R085W3
Lonten N-channel 150V, 120A, 8.5mΩ Power MOSFET
Features
Product Summary
V
DS
R
DS(on)
I
D
150V
7mΩ
120A
150V,120 A,R
DS(ON).max
=8.5 mΩ@ V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
100% Avalanche Tested
TO-220
TO-263
D
G
S
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS(Note 1)
V
GS
P
tot
T
j
,
T
stg
I
D
128
120
81
480
625
±20
227
-55...+175
A
mJ
V
W
°C
A
Symbol
V
DS
Value
150
Unit
V
※.
Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 50A, VGS = 10V.
Version 1.2,Jan-2020
1
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LSGC15R085W3\LSGE15R085W3
Thermal Resistance
Parameter
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Symbol
R
thJC
R
thJA
Max
0.52
60
Unit
°C/W
Electrical Characteristic
Parameter
(at Tj = 25 °C, unless otherwise specified)
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain
current
Gate-source leakage
current
Drain-source on-state
resistance
Transconductance
BV
DSS
V
GS(th )
150
2
-
3
-
4
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=150V,V
GS
=0V
I
DSS
-
-
I
GSS
-
-
-
-
1
10
100
nA
µA
T
j
=25°C
T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V, I
D
=50A
R
DS(on)
-
-
g
fs
-
7.0
7.0
91.8
8.5
8.5
-
mΩ
S
TO-220
TO-263
V
DS
=5V,I
D
=50A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
4217
512
15
63
21
15
11
107
54
102
3.0
-
-
-
-
-
-
-
-
-
-
-
Ω
ns
Vds=75V
Id=100A
Rg=2.7Ω
Vgs=10V;
(Note 2,3)
V
GS
=0V, V
DS
=0V,
f=1MHz
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pF
V
GS
=0V, V
DS
=75V,
f=1MHz
nC
V
GS
=10V, V
DS
=75V,
I
D
=50A, f=1MHz
Version 1.2,Jan-2020
2
LSGC15R085W3\LSGE15R085W3
Body Diode Characteristic
Parameter
Body Diode Forward
Voltage
Body Diode Reverse
Recovery Time
Body Diode Reverse
Recovery Charge
Symbol
Value
min.
-
-
-
typ.
0.86
100
451
max.
1.4
-
-
Unit
V
ns
nC
Test Condition
V
GS
=0V,I
SD
=50A
V
SD
t
rr
Q
rr
ISD=100A, VGS=0V,
dIF/dt=100A/us;
※.
Notes
2.Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
3.Essentially independent of operating temperature.
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LSGC15R085W3\LSGE15R085W3
Typical Performance Characteristics
300
280
260
240
220
200
180
Fig 1: Output Characteristics
100
Fig 2: Transfer Characteristics
V
DS
=5V
10V
6.5V
6.0V
5.5V
V
GS
=5.0V
I
D
(A)
80
I
D
(A)
160
140
120
100
80
60
40
20
0
0
1
2
3
4
60
125°C
40
25°C
20
V
DS
(V)
5
0
0
1
2
V
GS
(V)
3
4
5
6
7
10.0
9.0
Fig 3: Rds(on) vs
Drain Current and
Gate
Voltage
Fig 4: Rds(on) vs Gate Voltage
15
14
13
I
D
=50A
R
DS(on)
(mΩ)
8.0
7.0
R
DS(on)
(mΩ)
12
11
10
9
V
GS
=10V
6.0
5.0
4.0
10
20
30
40
50
60
70
80
90
100
8
7
6
5
3
4
5
I
D
(A)
V
GS
(V)
6
7
8
9
10
Fig 5: Rds(on) vs. Temperature
2.8
2.5
Fig 6: Capacitance Characteristics
10000
R
DS(on)
_Normalized
2.2
1.9
1.6
1.3
1.0
0.7
0.4
25
50
75
100
125
150
175
C - Capacitance (PF)
V
GS
=10V
I
D
=50A
D
Ciss
1000
Coss
100
Crss
V
GS
=0V
f=1MHz
10
0
10 20 30 40 50 60 70 80 90 100 110 12
Tj - Junction Temperature (°C)
V
DS
(V)
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LSGC15R085W3\LSGE15R085W3
Fig 7: Gate Charge Characteristics
10
Fig 8: Body-diode Forward
Characteristics
100
8
V
DS
=40V
I
D
=50A
V
GS
(V)
10
6
125˚C
1
4
25˚
C
25˚C
2
0.1
0
0
10
20
30
40
50
60
70
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Qg (nC)
Fig 9: Power Dissipation
250
Fig 10: Drain Current Derating
140
120
120
200
100
P
tot
(W)
I
D
(A)
150
80
60
40
100
50
V
GS
≥10V
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
0
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Fig 11: Safe Operating Area
1000
1us
1us
10us
10us
100us
100us
1ms
1ms
10
10ms
10ms
DC
DC
1
100
Limited by
Rds(on)
I
D
(A)
Single pulse
Tc=25˚C
0.1
0.1
1
10
100
V
DS
(V)
Version 1.2,Jan-2020
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