LSGC10R035/LSGD10R035/LSGE10R035
Lonten N-channel 100V, 180A, 3.5mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
I
D
100V
3.5mΩ
180A
effect transistors are using split gate trench DMOS R
DS(on),max
@ V
GS
=10V
Pin Configuration
Features
100V,180A, R
DS(on),max
=3.5mΩ@V
GS
= 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
G
S
N-Channel MOSFET
Pb
TO-220
TO-220MF
TO-263
D
Applications
Motor Drives
UPS
DC-DC Converter
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25°C )
1)
Continuous drain current ( T
C
= 100°C )
1)
Pulsed drain current
2)
Gate-Source voltage
Avalanche energy
3)
Power Dissipation ( T
C
= 25°C )
Storage Temperature Range
Operating Junction Temperature Range
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
Value
100
180
117
540
±20
306
181
-55 to +150
-55 to +150
Unit
V
A
A
A
V
mJ
W
°C
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Value
0.55
62
Unit
°C/W
°C/W
Version 0.5,Jan-2020
1
www.lonten.cc
LSGC10R035/LSGD10R035/LSGE10R035
Package Marking and Ordering Information
Device
LSGC10R035
LSGD10R035
LSGE10R035
Device Package
TO-220
TO-220MF
TO-263
Marking
LSGC10R035
LSGD10R035
LSGE10R035
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
Forward transconductance
T
J
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSSF
I
GSSR
R
DS(on)
g
fs
Test Condition
V
GS
=0 V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=100 V, V
GS
=0V, T
J
= 25°C
V
GS
=20 V, V
DS
=0 V
V
GS
=-20 V, V
DS
=0 V
V
GS
=10 V, I
D
=50 A
V
DS
=10V , I
D
=20A
Min.
100
2.0
---
---
---
---
---
Typ.
---
3.0
---
---
---
3.0
85
Max.
---
4.0
1
100
-100
3.5
---
Unit
V
V
μA
nA
nA
mΩ
S
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
R
g
V
GS
=0V, V
DS
=0V, F=1MHz
V
DD
= 50V,V
GS
=10V, I
D
= 20A
V
DS
= 50 V, V
GS
= 0 V,
F = 1MHz
---
---
---
---
---
---
---
---
9430
882
48
48
70
235
66
2.6
---
---
---
---
---
---
---
---
Ω
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge tota
Q
gs
Q
gd
Q
g
V
DS
=50 V, I
D
=20A,
V
GS
= 10 V
---
---
---
39
33
123
---
---
---
nC
Drain-Source diode characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
4)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V, I
S
=50A, T
J
=25℃
I
S
=20A, di/dt=100A/us,
T
J
=25℃
---
---
---
---
---
---
---
0.85
82
213
180
540
1.3
---
---
A
A
V
ns
nC
Notes:
1: The maximum junction current rating is package limited.
2: Repetitive Rating: Pulse width limited by maximum junction temperature.
3: V
DD
=50V, V
GS
=10V, L=0.5mH, I
AS
=35A, R
G
=25Ω, Starting T
J
=25℃.
4: Pulse Test：Pulse Width
≤300μs,
Duty Cycle≤2％.
Version 0.5,Jan-2020
2
www.lonten.cc
Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
V
GS
=2.5V, 3V, 5V, 6V,8V,10V
From Bottom to Top
Common Source
T
A
= 25°C
Pulse test
LSGC10R035/LSGD10R035/LSGE10R035
Figure 2. Transfer Characteristics
Common Source
V
DS
= 5 V
Pulse test
V
GS
=2V
125°C
25°C
V
GS
=1.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. Capacitance
Characteristics
Figure 4. Gate Charge Waveform
V
gs
= 50V
V
ds
= 15 V
I
D
= 20 A
Ciss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Coss
Crss
Notes:
f = 1 MHz
V
GS
=0 V
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 5. Body-Diode Characteristics
Figure 6. Rdson-Drain Current
V
GS
= 10V
125°C
25°C
Source-Drain Voltage V
SD
(V)
Drain Current I
D
(A)
Version 0.5,Jan-2020
3
www.lonten.cc
LSGC10R035/LSGD10R035/LSGE10R035
Figure 7. Rdson-Junction Temperature(℃)
V
GS
= 10V
I
D
= 50A
Figure 8. Rds(on) vs Gate Voltage
I
D
= 50A
T -Junction Temperation (
°C
)
J
Gate−source voltage V
GS
(V)
Figure 9.
BVdss vs. Junction temperature(℃)
Figure 10. Maximum Safe Operating Area
I
D
= 250uA
10us
Limited by Rdson
100us
DC
1ms
10ms
Notes:
Tc=25℃
T
j
=150℃
Single Pulse
T -Junction Temperation (
°C
)
J
Figure 9. Normalized Maximum Transient Thermal Impedance (RthJA)
D=Ton/T
T
JPK
=T
c
+P
DM
.Z
θJC
.R
θJC
R
θJC
Drain−source voltage V
DS
(V)
In descending oder
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
=0.55℃/W
Single Pulse
Version 0.5,Jan-2020
Pulse Width t (s)
4
www.lonten.cc
Test Circuit & Waveform
Figure 8. Gate Charge Test Circuit & Waveform
LSGC10R035/LSGD10R035/LSGE10R035
Figure 9. Resistive Switching Test Circuit & Waveforms
Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
Figure 11. Diode Recovery Circuit & Waveform
Version 0.5,Jan-2020
5
www.lonten.cc
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
