LNH04R050/LNG04R050
Lonten N-channel 40V, 100A, 5.0mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
effect
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
R
DS(on).max
@ V
GS
=10V
I
D
40V
5.0mΩ
100A
Pin Configuration
Features
40V,100A,R
DS(ON).max
=5.0mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
D
TO-251
TO-252
G
S
Applications
Motor Drives
UPS
DC-DC Converter
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25° )
C
T
C
= 25° unless otherwise noted
C
Symbol
V
DSS
I
D
Value
40
100
70
Unit
V
A
A
A
V
mJ
W
°
C
°
C
Continuous drain current ( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy
2)
Power Dissipation ( T
C
= 25° )
C
Storage Temperature Range
Operating Junction Temperature Range
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
400
±20
156
100
-55 to +150
-55 to +150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Symbol
R
θJC
Value
1.25
Unit
°
C/W
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LNH04R050/LNG04R050
Package Marking and Ordering Information
Device
LNG04R050
Device Package
TO-252
Marking
LNG04R050
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
Forward transconductance
T
J
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=40 V, V
GS
=0 V, T
J
= 25°
C
V
DS
=32 V, V
GS
=0 V, T
J
= 125°
C
40
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
3.8
4.7
79
---
2.0
1
30
100
-100
5
6.2
---
V
V
μA
μA
nA
nA
mΩ
mΩ
S
I
GSSF
I
GSSR
R
DS(on)
V
GS
=20 V, V
DS
=0 V
V
GS
=-20 V, V
DS
=0 V
V
GS
=10 V, I
D
=40 A
V
GS
=4.5 V, I
D
=30 A
g
fs
V
DS
=5 V , I
D
=30 A
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
t
d(on)
t
r
V
DD
= 30V,V
GS
=10V, I
D
=30 A
t
d(off)
t
f
R
g
V
GS
=0V, V
DS
=0V, F=1MHz
---
---
---
219.2
74
2.4
---
---
---
Ω
V
DS
= 20 V, V
GS
= 0 V,
F = 1MHz
---
---
---
338.5
231.6
213.6
---
---
---
ns
---
---
4023.6
410.4
---
---
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DS
=30 V, I
D
=30A,
V
GS
=10V
---
66.7
---
---
---
11
16.7
---
---
nC
Drain-Source diode characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
3)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
S
=20A,di/dt=100A/us, T
J
=25℃
Q
rr
---
29
---
nC
V
GS
=0V, I
S
=40A, T
J
=25℃
---
---
---
---
---
---
---
41.4
100
400
1.2
---
A
A
V
ns
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature.
2: V
DD
=20V, V
GS
=10V, L=0.5mH, I
AS
=25A, R
G
=25Ω, Starting T
J
=25℃.
3: Pulse Test：Pulse Width
≤300μs,
Duty Cycle≤2％.
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LNH04R050/LNG04R050
Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
V
GS
=4V, 4.5V, 5V, 6.5V, 8V,10V
From Bottom to Top
Figure 2. Transfer Characteristics
Common Source
V
DS
=5 V
Pulse test
Drain current I
D
(A)
Common Source
T
c
= 25°C
Pulse test
V
GS
=3V
Drain current I
D
(A)
T
c
=125°C
T
c
= 25°C
V
GS
=2.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. Capacitance Characteristics
Figure 4. Gate Charge Waveform
V
GS
= 10 V
V
DS
= 30V
Ciss
Capacitance (pF)
Gate-Source Voltage V
GS
(V)
I
D
= 30A
Coss
Crss
Notes:
f = 1 MHz
V
GS
=0 V
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 5. Body-Diode Characteristics
Figure 6. Rdson-Drain Current
ON-Resistance Rdson (mohm)
Reverse Drain current I
S
(A)
T
c
=125°C
V
GS
= 4.5V
T
c
= 25°C
V
GS
= 10V
Source-Drain Voltage V
SD
(V)
Drain Current I
D
(A)
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LNH04R050/LNG04R050
Figure 7. Rdson-Junction Temperature(℃)
Figure 8. Maximum Safe Operating Area
10us
Limited by R
Normalized On-Resistance
DS(on)
100us
DC
1ms
10ms
V
GS
= 10V
I
D
= 40A
Drain current I (A)
D
Notes:
T = 25°C
c
j
T = 150°C
Single Pulse
T -Junction Temperation (
°C
)
J
Drain-Source Voltage V
DS
(V)
Figure 9. Normalized Maximum Transient Thermal Impedance (RthJC)
Normalized Transient
Z
θJC
Thermal Resistance
Pulse Width t (s)
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LNH04R050/LNG04R050
Test Circuit & Waveform
Figure 8. Gate Charge Test Circuit & Waveform
Figure 9. Resistive Switching Test Circuit & Waveforms
Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
Figure 11. Diode Recovery Circuit & Waveform
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