LSC65R570GT/LSD65R570GT/LSG65R570GT/
LSH65R570GT/ LSE65R570GT / LSF65R570GT
LonFET
Lonten N-channel 650V, 7A, 0.57Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
700V
0.57Ω
21A
15nC
The resulting
Power MOSFET is fabricated using
advanced super junction technology.
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 15nC)
100% UIS tested
RoHS compliant
D
TO-251
TO-252
TO-220
TO-220MF
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
TO-262
TO-263
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation TO-220/
TO-251/TO-252/TO-262/TO-263 ( TC = 25° )
C
- Derate above 25°
C
Power Dissipation TO-220MF
( T
C
= 25° )
C
P
D
31
0.25
60
Ncm
Mounting torque To-220F ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
50
-55 to +150
7
21
°
C
A
A
W
W/°
C
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
650
7
4.4
21
±30
120
0.5
7
83
0.67
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°
C
- Derate above 25°
C
Mounting torque To-220 ( M3 and M3.5 screws )
Version 5.0
2018
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LSC65R570GT/LSD65R570GT/LSG65R570GT/
LSH65R570GT/ LSE65R570GT / LSF65R570GT
LonFET
Thermal Characteristics TO-251/TO-252/TO-220/TO-262/TO-263
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
1.5
62
Unit
°
C/W
°
C/W
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
4
80
Unit
°
C/W
°
C/W
Package Marking and Ordering Information
Device
LSC65R570GT
LSD65R570GT
LSG65R570GT
LSH65R570GT
LSE65R570GT
LSF65R570GT
Device Package
TO-220
TO-220MF
TO-252
TO-251
TO-263
TO-262
Marking
LSC65R570GT
LSD65R570GT
LSG65R570GT
LSH65R570GT
LSE65R570GT
LSF65R570GT
4680
50
50
800
Units/Tube
50
50
2500
2500
Units/Tube
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=650 V, V
GS
=0 V,
T
j
= 25°
C
T
j
= 125°
C
650
2.5
-
3.5
-
4.5
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
50
-50
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=3.5 A
T
j
= 25°
C
T
j
= 150°
C
0.49
1.2
8.3
0.57
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
C
iss
C
oss
C
rss
t
d(on)
V
DD
= 300V, I
D
= 3.5A
V
DS
= 100 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
584
23
1.3
11
-
-
-
-
pF
Version 5.0
2018
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LSC65R570GT/LSD65R570GT/LSG65R570GT/
LSH65R570GT/ LSE65R570GT / LSF65R570GT
LonFET
Rise time
Turn-off delay time
Fall time
t
r
t
d(off)
t
f
R
G
= 12Ω, V
GS
=10V
-
-
-
10
30
6
-
-
-
ns
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=3.5A,
V
GS
=0 to 10 V
-
-
-
-
2.4
6.8
15
5.8
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=3.5A
V
R
=50 V, I
F
=7A,
dI
F
/dt=100 A/μs
-
-
-
-
1.0
262
3.5
15
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 2A, V
DD
= 50V, Starting T
j
= 25°
C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 5.0
2018
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LSC65R570GT/LSD65R570GT/LSG65R570GT/
LSH65R570GT/ LSE65R570GT / LSF65R570GT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
14
12
10
8
6
4
2
0
0
4
8
12
16
VV
GS
=5.5V
=5.5V
GS
V
GS
=6V
V
GS
=6V
Common Source
Common Source
T
c
= T
c
= 25°C
25°C
Pulse test
Pulse test
V
GS
=10V
V
GS
=10V
Figure 2. Transfer Characteristics
14
12
V V
GS
=7V
=6.5V
GS
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
Drain current I
D
(A)
Drain current I
D
(A)
V
GS
=6.5V
10
8
6
4
2
0
2
4
6
8
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
1.1
1
0.9
0.8
Figure 4. Threshold Voltage vs. Temperature
1.3
1.2
1.1
V
th
, (Normalized)
Gate threshold voltage
1
0.9
0.8
0.7
0.6
0.5
I
DS
=0.25 mA
Pulse test
R
DS (on)
(Ω)
0.7
0.6
0.5
0.4
0.3
0.2
0
5
10
15
20
T
c
= 25°C
Pulse test
V
GS
= 10V
-60
-40
-20
0
20
40
60
80
100
120
140
160
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
1.2
Figure 6. On-Resistance vs. Temperature
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
2
1
1.5
0.9
1
0.8
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
0.5
V
GS
=10 V
I
DS
=3.5 A
Pulse test
0.7
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
-60
-40
-20
0
20
40
60
80
100 120 140 160
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
Version 5.0
2018
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LSC65R570GT/LSD65R570GT/LSG65R570GT/
LSH65R570GT/ LSE65R570GT / LSF65R570GT
LonFET
Figure 7. Capacitance Characteristics
10
4
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
10
Capacitance (pF)
10
3
C
iss
Gate-Source Voltage V
GS
(V)
8
6
10
2
C
oss
10
1
Notes:
f = 1 MHz
V
GS
=0 V
4
I
D
= 3.5A
2
C
rss
0
200
300
400
500
600
0
2
4
6
8
10
12
14
10
0
0
100
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-220/TO-251/TO-252/TO-262/TO-263
Drain current I
D
(A)
Drain-Source Voltage V
DS
(V)
Drain current I
D
(A)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Drain power dissipation P
D
(W)
Figure 10.2 Power Dissipation vs. Temperature
TO-220/TO-251/TO-252/TO-262/TO-263
Drain power dissipation P
D
(W)
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 5.0
2018
5
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