LSC65R380GT/LSD65R380GT/
LSE65R380GT/LSF65R380GT/LSG65R380GT
LonFET
Lonten N-channel 650V, 11A, 0.38Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated using
advanced super junction technology.
The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
700V
0.38Ω
30A
23nC
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 23nC)
100% UIS tested
RoHS compliant
D
TO-220
TO-220MF
TO-263 TO-262
TO-252
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation TO-220MF ( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-262 ( T
C
= 25°C )
- Derate above 25°C
Mounting torque To-262 ( M3 and M3.5 screws )
Mounting torque To-220MF ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
650
11
7
30
±30
270
0.5
11
33
0.26
125
1
60
50
-55 to +150
11
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
W
W/°C
Ncm
°C
A
A
Version 4.2,Sep-2019
Diode pulse current
1
30
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LSC65R380GT/LSD65R380GT/
LSE65R380GT/LSF65R380GT/LSG65R380GT
LonFET
Thermal Characteristics TO-262/TO-252/TO-263/ TO-220
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
1
62.5
260
Unit
°C/W
°C/W
°C
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
3.8
80
260
Unit
°C/W
°C/W
°C
Package Marking and Ordering Information
Device
LSC65R380GT
LSD65R380GT
LSE65R380GT
LSF65R380GT
LSG65R380GT
Device Package
TO-220
TO-220MF
TO-263-2L
TO-262
TO-252
Marking
LSC65R380GT
LSD65R380GT
LSE65R380GT
LSF65R380GT
LSG65R380GT
50
2500
Units/Tube
50
50
800
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=650 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
650
2.5
Typ.
-
3.5
Max.
-
4.5
Unit
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
50
-50
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=5.5 A
T
j
= 25°C
T
j
= 150°C
0.34
0.86
4.6
0.38
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
V
DD
= 380V, I
D
= 5.5A
R
G
= 4.7Ω, V
GS
=10V
V
DS
= 100 V, V
GS
= 0 V,
f = 250 kHz
-
-
-
-
-
1068
39
1.8
15
27
-
-
-
-
-
ns
pF
Version 4.2,Sep-2019
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LSC65R380GT/LSD65R380GT/
LSE65R380GT/LSF65R380GT/LSG65R380GT
LonFET
Turn-off delay time
Fall time
t
d(off)
t
f
-
-
69
11
-
-
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=5.5A,
V
GS
=0 to 10 V
-
-
-
-
6.2
8.5
22.8
5.5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=5.5A
V
R
=50 V, I
F
=11A,
dI
F
/dt=100 A/μs
-
-
-
-
1.0
345
3.8
22
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 3A, V
DD
= 60V, Starting T
j
= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 4.2,Sep-2019
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LSC65R380GT/LSD65R380GT/
LSE65R380GT/LSF65R380GT/LSG65R380GT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
V
GS
=10V
V
GS
=7V
V
GS
=6.5V
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
Common Source
T
c
= 25°C
Pulse test
V
GS
=6V
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperatur
V
GS
= 10V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=3.5 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
Version 4.2,Sep-2019
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LSC65R380GT/LSD65R380GT/
LSE65R380GT/LSF65R380GT/LSG65R380GT
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
C
oss
Notes:
f = 250 kHz
V
GS
=0 V
I
D
= 5.5A
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-263-2L/TO-262/TO-252/TO-220
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Figure 10.2 Power Dissipation vs. Temperature
TO-263-2L/TO-262/TO-252/TO-220
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 4.2,Sep-2019
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