LNC08R160/LNE08R160
Lonten N-channel 80V, 60A, 16mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
effect
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
R
DS(on).max
@ V
GS
=10V
I
D
80V
16mΩ
60A
Pin Configuration
Features
80V,60A,R
DS(on).max
=16mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
D
TO-220
TO-263
G
S
Applications
Motor Drives
UPS
DC-DC Converter
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25° )
C
T
C
= 25° unless otherwise noted
C
Symbol
V
DSS
I
D
Value
80
60
39
Unit
V
A
A
A
V
mJ
W
°
C
°
C
Continuous drain current ( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy
2)
Power Dissipation ( T
C
= 25° )
C
Storage Temperature Range
Operating Junction Temperature Range
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
240
±20
132
110
-55 to +150
-55 to +150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Value
0.88
62
Unit
°
C/W
°
C/W
Version 1.0 , 2018
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LNC08R160/LNE08R160
Package Marking and Ordering Information
Device
LNC08R160
LNE08R160
Device Package
TO-220
TO-263
Marking
LNC08R160
LNE08R160
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
T
J
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
V
GS
=0 V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=80V, V
GS
=0V, T
J
= 25°
C
80
1.0
---
---
---
---
---
---
---
---
1.6
---
---
---
---
12.5
16.5
52
---
2.5
1
30
100
-100
16
21
---
V
V
μA
μA
nA
nA
mΩ
mΩ
S
Drain-source leakage current
I
DSS
V
DS
=64V, V
GS
=0V, T
J
= 125°
C
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
Forward transconductance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=20 V, V
DS
=0 V
V
GS
=-20 V, V
DS
=0 V
V
GS
=10 V, I
D
= 30 A
V
GS
=4.5 V, I
D
=20 A
g
fs
V
DS
=10V , I
D
=30A
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
t
d(on)
t
r
V
DD
=40V,V
GS
=10V, I
D
= 30A
t
d(off)
t
f
R
g
V
GS
=0V, V
DS
=0V, F=1MHz
---
---
---
139.7
28.3
1.5
---
---
---
Ω
V
DS
= 25 V, V
GS
= 0 V,
F = 1MHz
---
---
---
140
10.7
17.7
---
---
---
ns
---
---
3116
196
---
---
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge tota
Q
gs
Q
gd
Q
g
V
DS
=40 V, I
D
=30A,
V
GS
= 10 V
---
58
---
---
---
13.6
11.7
---
---
nC
Drain-Source diode characteristics and Maximum Ratings
Diode Forward Voltage
3)
Reverse Recovery Time
Reverse Recovery Charge
V
SD
t
rr
Q
rr
V
GS
=0V, I
S
=30A, T
J
=25℃
I
S
=30A, di/dt=100A/us,
T
J
=25℃
---
---
---
0.85
27.7
41
1.3
---
---
V
ns
nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature.
2: V
DD
=50V, V
GS
=10V, L=0.5mH, I
AS
=23A, R
G
=25Ω, Starting T
J
=25℃.
3: Pulse Test：Pulse Width
≤300μs,
Duty Cycle≤2％.
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LNC08R160/LNE08R160
Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
V
GS
=4 V
Common Source
T
c
= 25°C
Pulse test
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
Drain current I
D
(A)
V
GS
=4.5V, 5V, 6.5V, 8V,,10V
From Bottom to Top
V
GS
=3.5V
Drain current I
D
(A)
T
c
=1 25°C
T
c
= 25°C
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 4. Gate Charge Waveform
V
gs
= 10 V
V
ds
= 40 V
Ciss
Capacitance (pF)
Gate-Source Voltage V
GS
(V)
I
D
= 30 A
Notes:
f = 1 MHz
V
GS
=0 V
Coss
Crss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 5. Body-Diode Characteristics
Figure 6. Rdson-Drain Current
ON-Resistance Rdson (mohm)
Reverse Drain current I
S
(A)
V
GS
= 4.5V
T
c
=1 25°C
T
c
= 25°C
V
GS
= 10V
Source-Drain Voltage V
SD
(V)
Drain Current I
D
(A)
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LNC08R160/LNE08R160
Figure 7. Rdson-Junction Temperature(℃)
Figure 8. Maximum Safe Operating Area
10us
Normalized On-Resistance
Drain current I (A)
100us
Limited by R
DS(on)
D
V
GS
= 10V
I
D
= 30A
1ms
DC
Notes:
T = 25°C
c
j
T = 150°C
Single Pulse
T -Junction Temperation (
°C
)
J
Drain-Source Voltage V
DS
(V)
Figure 6. Normalized Maximum Transient Thermal Impedance (RthJC)
Normalized Transient
Thermal Resistance
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
θJC
Z
P
DM
t
Duty = t/T
T
Z (t)=0.88°C/W Max.
θJC
Pulse Width t (s)
Figure 7. Normalized Maximum Transient Thermal Impedance (RthJA)
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LNC08R160/LNE08R160
Test Circuit & Waveform
Figure 8. Gate Charge Test Circuit & Waveform
Vgs
Qg
VDC
10V
Qgs
Qgd
DUT
Vgs
Ig
VDC
Vds
charge
Figure 9. Resistive Switching Test Circuit & Waveforms
RL
Vds
Vgs
Rg
Vgs
DUT
VDC
Vds
90%
Vdd
10%
Vgs
Td(on)
Tr(on)
Td(off)
Tf(off)
Ton
Toff
Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
L
Vds
Id
Vgs
Rg
Vgs
DUT
V
gs
E
AR
½
Vds
Id
VDC
1
2
LI
AR
2
BVdss
IAR
Vdd
Vgs
Figure 11. Diode Recovery Circuit & Waveform
Vds+
DUT
Vds-
Isd
Vgs
VDC
L
Vdd
Ig
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