LND16N65/LNC16N65
Lonten N-channel 650V, 16A Power MOSFET
Description
The Power MOSFET is fabricated using the
advanced
planer
VDMOS
technology.
The
resulting device has low conduction resistance,
superior switching performance and high avalanche
energy.
Product Summary
V
DSS
I
D
R
DS(on),max
Q
g,typ
650V
16A
0.6Ω
53.9C
Features
Low R
DS(on)
Low gate charge (typ. Q
g
= 53.9 nC)
100% UIS tested
RoHS compliant
G
S
N-Channel MOSFET
Pb
TO-220
TO-220F
D
Applications
Power factor correction.
Switched mode power supplies.
LED driver.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Peak diode recovery dv/dt
3)
Power Dissipation TO-220F ( T
C
= 25°C )
Derate above 25°C
Power Dissipation
TO-220 ( T
C
= 25°C )
Derate above 25°C
Operating junction and storage temperature range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
180
1.44
-55 to +150
16
64
W
W/°C
°C
A
A
I
DM
V
GSS
E
AS
dv/dt
V
DSS
I
D
Symbol
Value
650
16
11.5
64
±30
605
5
44
0.35
Unit
V
A
A
A
V
mJ
V/ns
W
W/°C
Thermal Characteristics
Parameter
Thermal resistance, Junction-to-case
Symbol
R
θJC
R
θJA
Value
TO-220F
2.85
110
TO-220
0.69
62.5
Unit
°C/W
Version 2.0
Thermal resistance, Junction-to-ambient
2019
1
www.lonten.cc
°C/W
LND16N65/LNC16N65
Package Marking and Ordering Information
Device
LNC16N65
LND16N65
Device Package
TO-220
TO-220F
Marking
LNC16N65
LND16N65
Units/Tube
50
50
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25 mA
V
DS
=650 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
650
2
Typ.
-
-
Max.
-
4
Unit
V
V
-
-
-
-
-
-
1
100
μA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=8A
-
-
0.48
100
-100
0.6
nA
nA
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 325 V, I
D
= 16 A
R
G
= 10 Ω, V
GS
=15 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
-
2640
235
15
15.4
41.0
88.7
17.8
-
-
-
-
-
-
-
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=520 V, I
D
=16 A,
V
GS
=0 to 10 V
-
-
-
-
13.4
20.1
53.9
5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=16 A
V
R
=325 V, I
F
=16 A,
dI
F
/dt=100 A/μs
-
-
-
-
-
448.4
5.38
24
1.5
-
-
-
V
ns
μC
A
Notes:
1. Pulse width limited by maximum junction temperature.
2. L=10mH, I
AS
= 11A, Starting T
j
= 25°C
3. I
SD
= 16A, di/dt≤100A/us, V
DD
≤BV
DS
, Starting T
j
= 25°C.
Version 2.0
2019
2
www.lonten.cc
LND16N65/LNC16N65
Electrical Characteristics Diagrams
Figure 1. Typical Output Characteristics
Figure 2. Transfer Characteristics
V
GS
=10V
V
GS
=8V
V
GS
=7V
V
GS
=6V
V
GS
=5.5V
T
c
= 25°C
T
c
= 150°C
V
GS
=4.5V
V
DS
,Drain−source voltage (V)
V
GS
,Gate−source voltage (V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10 V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
I
D
,Drain current (A)
T
j
,Junction temperature (°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=8 A
Pulse test
T
j
,Junction temperature (°C)
T
j
,Junction temperature (°C)
Version 2.0
2019
3
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LND16N65/LNC16N65
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
C
iss
V
DS
=520
C
oss
I
D
= 16 A
Notes:f = 1 MHz,V
GS
=0 V
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
rss
V
DS
,Drain-Source Voltage (V)
Q
G
,Total Gate Charge (nC)
Figure 9. Maximum Safe Operating Area
TO-220F
Figure 10. Maximum Safe Operating Area
TO-220
100us
10ms
DC
1ms
1ms
10ms
DC
100us
Limited by R
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
DS(on)
Limited by R
DS(on)
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
V
DS
,Drain-Source Voltage (V)
V
DS
,Drain-Source Voltage (V)
Figure 11. Power Dissipation vs. Temperature
TO-220F
Figure 12. Power Dissipation vs. Temperature
TO-220
T
c
,Case temperature (°C)
T
c
,Case temperature (°C)
Version 2.0
2019
4
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LND16N65/LNC16N65
Figure 13. Continuous Drain Current vs. Temperature
Figure 14. Body Diode Transfer Characteristics
T
c
= 150°
C
T
c
= 25°C
T
c
,Case temperature (°C)
V
SD
,Source-Drain Voltage (V)
Figure 15 Transient Thermal Impedance, Junction to Case, TO-220F
P
DM
t
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
Duty = t/T
T
Z (t)=2.85°C/W Max.
θJC
t ,Pulse Width (s)
Figure 16. Transient Thermal Impedance, Junction to Case, TO-220
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
P
DM
t
Duty = t/T
T
Z (t)=0.69°C/W Max.
θJC
t ,Pulse Width (s)
Version 2.0
2019
5
www.lonten.cc
NXP MCU
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