LSDN60R950HT/LSG60R950HT/ LSH60R950HT
LonFET
Lonten N-channel 600V, 4A, 950mΩ LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated using
advanced super junction technology.
resulting
device
has
extremely
low
The
on
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
650V
950mΩ
12A
7.6nC
resistance, making it especially suitable for
applications which require superior power
density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 7.6nC)
100% UIS tested
RoHS compliant
TO-251
TO-252
TO-220FT
D
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation TO-220FT ( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-251/ TO-252 ( TC = 25°C )
- Derate above 25°C
Mounting torque To-220FT ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
E
AR
I
AR
I
D
Symbol
V
DSS
Value
600
4
2.5
12
±30
120
0.6
4
25
0.20
40
0.32
50
-55 to +150
4
12
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
W
W/°C
Ncm
°C
A
Version 2.1,Sep-2019
Diode pulse current
1
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A
LSDN60R950HT/LSG60R950HT/ LSH60R950HT
LonFET
Thermal Characteristics TO-251/TO-252
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
3.13
160
260
Unit
°C/W
°C/W
°C
Thermal Characteristics TO-220FT
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
5.0
105
260
Unit
°C/W
°C/W
°C
Package Marking and Ordering Information
Device
LSDN60R950HT
LSG60R950HT
LSH60R950HT
Device Package
TO-220FT
TO-252
TO-251
Marking
LSDN60R950HT
LSG60R950HT
LSH60R950HT
Units/Tube
50
72
72
2500
4680
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=600 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
600
2.5
Typ.
-
3.5
Max.
-
4.5
Unit
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=2A
T
j
= 25°C
T
j
= 150°C
0.86
2.2
8
0.95
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 400 V, I
D
= 2 A
R
G
= 10Ω, V
GS
=15 V
V
DS
= 100 V, V
GS
= 0 V,
f = 250 kHz
-
-
-
-
-
-
317
14.1
1.36
16.1
27
46
36.4
-
-
-
-
-
-
-
ns
pF
Version 2.1,Sep-2019
Fall time
2
-
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LSDN60R950HT/LSG60R950HT/ LSH60R950HT
LonFET
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=2 A,
V
GS
=0 to 10 V
-
-
-
-
2.5
2.6
7.6
6
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=2 A
V
R
=400 V, I
F
=2 A,
dI
F
/dt=100 A/μs
-
-
-
-
1.0
153
0.8
10.5
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 2A, V
DD
= 60V, Starting T
j
= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 2.1,Sep-2019
3
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LSDN60R950HT/LSG60R950HT/ LSH60R950HT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Common Source
T
c
= 25°C
Pulse test
V
GS
=7V
V
GS
=10V
V
GS
=6.5V
V
GS
=6V
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
T=25℃
T=125℃
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=2 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
Version 2.1,Sep-2019
4
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LSDN60R950HT/LSG60R950HT/ LSH60R950HT
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
Notes:
f = 250 kHz
V
GS
=0 V
C
iss
C
oss
C
rss
I
D
=2A
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220FT
10us
100us
Figure 9.2 Maximum Safe Operating Area
TO-251/TO-252
1ms
Limited by R
10us
Limited by R
DS(on)
1ms
100us
DS(on)
DC
DC
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220FT
Figure 10.2 Power Dissipation vs. Temperature
TO-251/TO-252
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 2.1,Sep-2019
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