LSB60R180HT/ LSC60R180HT/ LSD60R180HT
/ LSE60R180HT/ LSF60R180HT/LSNC60R180HT
LonFET
Lonten N-channel 600V, 20A, 0.18Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated
using advanced super junction technology.
The resulting device has extremely low on
resistance, making it especially suitable for
applications which require superior power
density and outstanding efficiency.
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
650V
0.18Ω
60A
30nC
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 30nC)
100% UIS tested
RoHS compliant
TO-247
TO-220MF
TO-263
TO-220
TO-262
D
Applications
DFN8*8
mode
power
supplies
Power faction correction (PFC).
Switched
(SMPS).
G
S
N-Channel MOSFET
Pb
Uninterruptible power supply (UPS).
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation TO-247 ( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-220MF ( T
C
= 25°C )
- Derate above 25°C
Mounting torque To-220MF ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
600
20
13
60
±30
600
0.4
20
146
1.16
30
0.24
50
-55 to +150
20
60
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
W
W/°C
Ncm
°C
A
A
Version 3.1,Sep-2019
1
www.lonten.cc
LSB60R180HT/ LSC60R180HT/ LSD60R180HT
/ LSE60R180HT/ LSF60R180HT/LSNC60R180HT
LonFET
Thermal Characteristics TO-247/TO-263/TO-262/TO-220/DFN8*8
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
0.86
118
260
Unit
°C/W
°C/W
°C
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
4.2
88
260
Unit
°C/W
°C/W
°C
Package Marking and Ordering Information
Device
LSB60R180HT
LSC60R180HT
LSD60R180HT
LSE60R180HT
LSF60R180HT
LSNC60R180HT
Device Package
TO-247
TO-220
TO-220MF
TO-263-2L
TO-262
DFN 8*8
Marking
LSB60R180HT
LSC60R180HT
LSD60R180HT
LSE60R180HT
LSF60R180HT
LSNC60R180HT
50
3000
Units/Tube
30
50
50
800
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=600 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
600
2.5
Typ.
-
3.5
Max.
-
4.5
Unit
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=10 A
T
j
= 25°C
T
j
= 150°C
0.15
0.4
4.5
0.18
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
C
iss
C
oss
C
rss
t
d(on)
V
DD
= 300V, I
D
= 10A
V
DS
= 100 V, V
GS
= 0 V,
f = 250 kHz
-
-
-
-
1770
63.9
1.46
23.4
-
-
-
-
pF
Version 3.1,Sep-2019
2
www.lonten.cc
LSB60R180HT/ LSC60R180HT/ LSD60R180HT
/ LSE60R180HT/ LSF60R180HT/LSNC60R180HT
LonFET
Rise time
Turn-off delay time
Fall time
t
r
t
d(off)
t
f
R
G
= 10Ω, V
GS
=15V
-
-
-
33
121
7.5
-
-
-
ns
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=10A,
V
GS
=0 to 10 V
-
-
-
-
8
10
30
5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=10A
V
R
=50 V, I
F
=10A,
dI
F
/dt=100 A/μs
-
-
-
-
-
285
4.1
28.4
1.2
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 5A, V
DD
=60V, Starting T
j
= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 3.1,Sep-2019
3
www.lonten.cc
LSB60R180HT/ LSC60R180HT/ LSD60R180HT
/ LSE60R180HT/ LSF60R180HT/LSNC60R180HT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
V
GS
=7V
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
V
GS
=6.5V
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
Figure 2. Transfer Characteristics
T
c
= 25°C
V
GS
=6V
T
c
= 125°C
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=10 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
Version 3.1,Sep-2019
4
www.lonten.cc
LSB60R180HT/ LSC60R180HT/ LSD60R180HT
/ LSE60R180HT/ LSF60R180HT/LSNC60R180HT
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
Notes:
f = 250 kHz
V
GS
=0 V
C
oss
I
D
= 10A
C
rss
Drain-Source Voltage V
Area
Figure 9.1 Maximum Safe Operating
DS
(V)
G
Figure 9.2 Maximum Safe Operating Area
Total Gate Charge Q (nC)
TO-220MF
TO-247/TO-263/TO-220/TO-262/DFN8*8
10us
100us
1ms
Limited by R
DS(on)
Limited by R
DS(on)
DC
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
10us
100us
1ms
DC
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Figure 10.2 Power Dissipation vs. Temperature
TO-247/TO-263/TO-220/TO-262/DFN8*8
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 3.1,Sep-2019
5
www.lonten.cc
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
