LSD70R1KGT/LSG70R1KGT/ LSH70R1KGT
LonFET
Lonten N-channel 700V, 4A, 1.08Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
750V
1.08Ω
12A
13nC
The
on
Power MOSFET is fabricated using
device
has
extremely
low
advanced super junction technology.
resulting
resistance, making it especially suitable for
applications which require superior power
density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 13nC)
100% UIS tested
RoHS compliant
TO-251
TO-252
TO-220MF
D
Applications
G
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation
TO-220MF ( T
C
= 25° )
C
- Derate above 25°
C
P
D
Power Dissipation
TO-251/ TO-252( TC = 25° )
C
- Derate above 25°
C
Mounting torque To-220MF ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
50
0.4
50
-55 to +150
4
12
W
W/°
C
Ncm
°
C
A
A
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
700
4
2.5
12
±30
120
0.6
4
29
0.23
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°
C
Version 6.0
2018
1
www.lonten.cc
LSD70R1KGT/LSG70R1KGT/ LSH70R1KGT
LonFET
Thermal Characteristics TO-251/TO-252
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
2.5
62
Unit
°
C/W
°
C/W
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
3.8
80
Unit
°
C/W
°
C/W
Package Marking and Ordering Information
Device
LSD70R1KGT
LSG70R1KGT
LSH70R1KGT
Device Package
TO-220MF
TO-252
TO-251
Marking
LSD70R1KGT
LSG70R1KGT
LSH70R1KGT
72
Units/Tube
50
2500
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=700 V, V
GS
=0 V,
T
j
= 25°
C
T
j
= 125°
C
700
2.5
-
3.5
-
4.5
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
50
-50
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=2A
T
j
= 25°
C
T
j
= 150°
C
1.0
2.5
8
1.08
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 300 V, I
D
= 2 A
R
G
= 12Ω, V
GS
=10 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
-
513
270
4
17
21
42
11
-
-
-
-
-
-
-
ns
pF
Gate charge characteristics
Version 6.0
2018
2
www.lonten.cc
LSD70R1KGT/LSG70R1KGT/ LSH70R1KGT
LonFET
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=2 A,
V
GS
=0 to 10 V
-
-
-
-
4.1
5.5
13.2
5.8
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=2 A
V
R
=50 V, I
F
=4 A,
dI
F
/dt=100 A/μs
-
-
-
-
1.0
223
1.4
13
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 2A, V
DD
= 60V, Starting T
j
= 25°
C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 6.0
2018
3
www.lonten.cc
LSD70R1KGT/LSG70R1KGT/ LSH70R1KGT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
V
GS
=10V
Common Source
T
c
= 25°C
Pulse test
V
GS
=7V
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
Drain current I
D
(A)
V
GS
=6.5V
V
GS
=6V
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Drain current I
D
(A)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10V
T
c
= 25°C
Pulse test
V
th
, (Normalized)
Gate threshold voltage
R
DS (on)
(Ω)
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
V
GS
=10 V
I
DS
=2 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
Version 6.0
2018
4
www.lonten.cc
LSD70R1KGT/LSG70R1KGT/ LSH70R1KGT
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
C
oss
Notes:
f = 1 MHz
V
GS
=0 V
Gate-Source Voltage V
GS
(V)
Capacitance (pF)
I
D
=2A
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-251/TO-252
Drain current I
D
(A)
Drain-Source Voltage V
DS
(V)
Drain current I
D
(A)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Drain power dissipation P
D
(W)
Figure 10.2 Power Dissipation vs. Temperature
TO-251/TO-252
Drain power dissipation P
D
(W)
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 6.0
2018
5
www.lonten.cc
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
