LSGC10R080W3/LSGD10R080W3/LSGE10R080W3
Lonten N-channel 100V, 80A, 8mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
I
D
100V
8mΩ
80A
effect transistors are using split gate trench DMOS R
DS(on).max
@ V
GS
=10V
Pin Configuration
Features
100V,80A,R
DS(ON).max
=8mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
G
TO-220FB
TO-220MF
D
Applications
TO-263
N-Channel MOSFET
S
Motor Drives
UPS
DC-DC Converter
= 25°C unless otherwise noted
Pb
Absolute Maximum Ratings
T
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25°C )
Continuous drain current ( T
C
= 100°C )
Pulsed drain current
(note 1)
Gate-Source voltage
Avalanche energy, single pulse
(note 2)
C
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
P
D
P
D
T
STG
T
J
Value
100
80
60
320
±20
110
150
48
-55 to +150
-55 to +150
Unit
V
A
A
A
V
mJ
W
W
°C
°C
Power Dissipation ( T
C
= 25°C ) TO-220FB/TO-263-2L
Power Dissipation ( T
C
= 25°C ) TO-220MF
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case TO-220FB/TO-263-2L
Thermal Resistance, Junction-to-Case TO-220MF
Thermal Resistance, Junction-to-Ambient TO-220FB/TO-263-2L
Symbol
R
θJC
Value
0.83
2.6
62
80
Unit
°C/W
°C/W
°C/W
Version 1.1,Jan-2020
Thermal Resistance, Junction-to-Case TO-220MF
R
θJA
1
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°C/W
LSGC10R080W3/LSGD10R080W3/LSGE10R080W3
Package Marking and Ordering Information
Device
LSGC10R080W3
LSGD10R080W3
LSGE10R080W3
Device Package
TO-220FB
TO-220MF
TO-263
Marking
LSGC10R080W3
LSGD10R080W3
LSGE10R080W3
Electrical Characteristics
T = 25°C unless otherwise noted
J
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=100V, V
GS
=0V, T
J
= 25°C
V
DS
=80V, V
GS
=0V, T
J
= 125°C
Min.
100
1.4
---
---
---
---
---
---
---
Typ.
---
1.8
---
---
---
---
6.8
8.3
112
Max.
---
2.2
1
10
100
-100
8
10
---
Unit
V
V
μA
μA
nA
nA
mΩ
mΩ
S
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
(note 3)
Drain-source on-state resistance
(note 3)
Forward transconductance
I
GSSF
I
GSSR
R
DS(on)
g
fs
V
GS
=20 V, V
DS
=0 V
V
GS
=-20 V, V
DS
=0 V
V
GS
=10 V, I
D
=50 A
V
GS
=4.5 V, I
D
=40 A
V
DS
=5V , I
D
=50A
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
(note 3,4)
Rise time
(note 3,4)
Turn-off delay time
(note 3,4)
Fall time
(note 3,4)
Gate resistance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
R
g
V
GS
=0V, V
DS
=0V, F=1MHz
V
DD
= 50V,V
GS
=10V, I
D
= 50A
V
DS
= 50 V, V
GS
= 0 V,
F = 1MHz
---
---
---
---
---
---
---
---
2630
453
36
10.5
63
30
96
1.1
---
---
---
---
---
---
---
---
Ω
ns
pF
Gate charge characteristics
Gate to source charge
(note 3,4)
Gate to drain charge
(note 3,4)
Gate charge total
(note 3,4)
Q
gs
Q
gd
Q
g
V
DS
=50 V, I
D
=50A,
V
GS
= 10 V
---
---
---
10.2
6.6
45
---
---
---
nC
Drain-Source diode characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
(note 3)
Diode Forward Voltage
(note 3)
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
V
G
=V
D
=0 V, Force Current
V
GS
=0V, I
S
=50A, T
J
=25℃
I
S
=50A, di/dt=100A/us,
T
J
=25℃
---
---
---
---
---
---
---
0.95
65
104
80
320
1.3
---
---
A
A
V
ns
nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature.
2: V
DD
=50V, V
GS
=10V, L=0.5mH, I
AS
=21A, R
G
=25Ω, Starting T
J
=25℃.
3: Pulse Test：Pulse Width
≤300μs,
Duty Cycle≤2％.
4: Essentially independent of operating temperature.
Version 1.1,Jan-2020
2
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LSGC10R080W3/LSGD10R080W3/LSGE10R080W3
Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance Characteristics
Figure 4. Gate Charge Waveform
Figure 5. Body-Diode Characteristics
Figure 6. Rdson-Drain Current
Version 1.1,Jan-2020
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LSGC10R080W3/LSGD10R080W3/LSGE10R080W3
Figure 7. Rdson-Junction Temperature(℃)
Figure 8. Maximum Safe Operating Area
10us
Drain current I
D
(A)
L mited by R
DS(on)
1ms
100us
DC
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Drain-Source Voltage V
DS
(V)
Figure 9. Normalized Maximum Transient Thermal Impedance (RthJC)
Version 1.1,Jan-2020
4
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Test Circuit & Waveform
LSGC10R080W3/LSGD10R080W3/LSGE10R080W3
Figure 8. Gate Charge Test Circuit & Waveform
Figure 9. Resistive Switching Test Circuit & Waveforms
Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
Figure 11. Diode Recovery Circuit & Waveform
Version 1.1,Jan-2020
5
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