LNC5N50\LND5N50\LNG5N50\LNH5N50
Lonten N-channel 500V, 5A Power MOSFET
Description
The Power MOSFET is fabricated using the
advanced
planar
VDMOS
technology.
The
resulting device has low conduction resistance,
superior switching performance and high avalanche
energy.
Product Summary
V
DSS
I
D
R
DS(on),max
Q
g,typ
500V
5A
1.6Ω
12.8 nC
Features
Low R
DS(on)
Low gate charge (typ. Q
g
= 12.8 nC)
100% UIS tested
RoHS compliant
G
S
N-Channel MOSFET
Pb
TO-251
TO-252
TO-220
TO-220F
D
Applications
Power factor correction.
Switched mode power supplies.
LED driver.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Peak diode recovery dv/dt
3)
Power Dissipation TO-220F ( T
C
= 25°C )
Derate above 25°C
Power Dissipation
TO-220\TO-251\TO-252 ( T
C
= 25°C )
Derate above 25°C
Operating junction and storage temperature range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
75
0.6
-55 to +150
5
20
W
W/°C
°C
A
A
I
DM
V
GSS
E
AS
dv/dt
V
DSS
I
D
Symbol
Value
500
5
3.1
20
±30
210
5
30
0.24
Unit
V
A
A
A
V
mJ
V/ns
W
W/°C
Thermal Characteristics
Parameter
Thermal resistance, Junction-to-case
Symbol
R
θJC
R
θJA
Value
TO-220F
4.17
62.5
TO-220\TO-251\TO-252
1.67
110
Unit
°C/W
°C/W
Version 1.2,Jan-2020
Thermal resistance, Junction-to-ambient
1
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LNC5N50\LND5N50\LNG5N50\LNH5N50
Package Marking and Ordering Information
Device
LNC5N50
LND5N50
LNG5N50
LNH5N50
Device Package
TO-220
TO-220F
TO-252
TO-251
Marking
LNC5N50
LND5N50
LNG5N50
LNH5N50
80
Units/Tube
50
50
3000
Units/Reel
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25 mA
V
DS
=500 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
500
2
Typ.
-
-
Max.
-
4
Unit
V
V
-
-
-
-
-
-
1
100
μA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=2.5 A
-
-
1.35
100
-100
1.60
nA
nA
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 250 V, I
D
= 5 A
R
G
= 10 Ω, V
GS
=15 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
-
537.5
80.3
4
10.3
33.1
29.4
13.2
-
-
-
-
-
-
-
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V, I
D
=5 A,
V
GS
=0 to 10 V
-
-
-
-
3.9
4.6
12.8
5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=5 A
V
R
=250 V, I
F
=5 A,
dI
F
/dt=100 A/μs
-
-
-
-
-
319.2
1.6
10.2
1.5
-
-
-
V
ns
μC
A
Notes:
1. Pulse width limited by maximum junction temperature.
2. L=10mH, I
AS
= 6.5A, Starting T
j
= 25°C.
3. I
SD
= 5A, di/dt≤100A/us, V
DD
≤BV
DS
, Starting T
j
= 25°C.
Version 1.2,Jan-2020
2
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LNC5N50\LND5N50\LNG5N50\LNH5N50
Electrical Characteristics Diagrams
Figure 1. Typical Output Characteristics
V
GS
=10V
V
GS
=9V
V
GS
=8V
V
GS
=7V
V
GS
=5.5V
V
GS
=6V
T
c
= 25°C
Figure 2. Transfer Characteristics
T
c
= 150°C
V
DS
,Drain−source voltage (V)
V
GS
,Gate−source voltage (V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10 V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
I
D
,Drain current (A)
T
j
,Junction temperature (°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=2.5 A
Pulse test
T
j
,Junction temperature (°C)
T
j
,Junction temperature (°C)
Version 1.2,Jan-2020
3
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LNC5N50\LND5N50\LNG5N50\LNH5N50
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
C
iss
V
DS
=250
Notes:f = 1 MHz,V
GS
=0 V
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
oss
C
rss
I
D
= 5 A
V
DS
,Drain-Source Voltage (V)
Q
G
,Total Gate Charge (nC)
Figure 9. Maximum Safe Operating Area
TO-220F
Figure 10. Maximum Safe Operating Area
TO-220/TO-251/TO-252
100us
10ms
Limited by R
DS(on)
DC
1ms
Limited by R
DS(on)
1ms
10ms
DC
100us
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
V
DS
,Drain-Source Voltage (V)
V
DS
,Drain-Source Voltage (V)
Figure 11. Power Dissipation vs. Temperature
TO-220F
Figure 12. Power Dissipation vs. Temperature
TO-220/TO-251/TO-252
Version 1.2,Jan-2020
T
c
,Case temperature (°C)
4
T
c
,Case temperature (°C)
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LNC5N50\LND5N50\LNG5N50\LNH5N50
Figure 13. Continuous Drain Current vs. Temperature
Figure 14. Body Diode Transfer Characteristics
T
c
= 150°
C
T
c
= 25°C
T
c
,Case temperature (°C)
V
SD
,Source-Drain Voltage (V)
Figure 15 Transient Thermal Impedance, Junction to Case, TO-220F
P
DM
t
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
Duty = t/T
T
Z (t)=4.17°C/W Max.
θJC
t ,Pulse Width (s)
Figure 16. Transient Thermal Impedance, Junction to Case, TO-220/TO-251/TO-252
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
P
DM
t
Duty = t/T
T
Z (t)=1.67°C/W Max.
θJC
t ,Pulse Width (s)
Version 1.2,Jan-2020
5
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