LSB60R180HT/ LSC60R180HT/ LSD60R180HT
/ LSE60R180HT/ LSF60R180HT/LSNC60R180HT
LonFET
Lonten N-channel 600V, 20A, 0.18Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
650V
0.18Ω
60A
30nC
Power MOSFET is fabricated
using advanced super junction technology.
The resulting device has extremely low on
resistance, making it especially suitable for
applications which require superior power
density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 30nC)
100% UIS tested
RoHS compliant
TO-247
TO-220MF
TO-263
TO-220
TO-262
D
Applications
DFN8*8
mode
power
supplies
Power faction correction (PFC).
Switched
(SMPS).
G
S
N-Channel MOSFET
Pb
Uninterruptible power supply (UPS).
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation
TO-247 ( T
C
= 25° )
C
- Derate above 25°
C
Power Dissipation
TO-220MF ( T
C
= 25° )
C
- Derate above 25°
C
Mounting torque To-220MF ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
600
20
13
60
±30
600
0.4
20
146
1.16
30
0.24
50
-55 to +150
20
60
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°
C
W
W/°
C
Ncm
°
C
A
A
Version 3.0
2018
1
www.lonten.cc
LSB60R180HT/ LSC60R180HT/ LSD60R180HT
/ LSE60R180HT/ LSF60R180HT/LSNC60R180HT
LonFET
Thermal Characteristics TO-247/TO-263/TO-262/TO-220/DFN8*8
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
0.86
118
Unit
°
C/W
°
C/W
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
4.2
88
Unit
°
C/W
°
C/W
Package Marking and Ordering Information
Device
LSB60R180HT
LSC60R180HT
LSD60R180HT
LSE60R180HT
LSF60R180HT
LSNC60R180HT
Device Package
TO-247
TO-220
TO-220MF
TO-263-2L
TO-262
DFN 8*8
Marking
LSB60R180HT
LSC60R180HT
LSD60R180HT
LSE60R180HT
LSF60R180HT
LSNC60R180HT
50
260
Units/Tube
30
50
50
800
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=600 V, V
GS
=0 V,
T
j
= 25°
C
T
j
= 125°
C
600
2.5
-
3.5
-
4.5
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=10 A
T
j
= 25°
C
T
j
= 150°
C
0.15
0.4
4.5
0.18
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
C
iss
C
oss
C
rss
t
d(on)
V
DD
= 300V, I
D
= 10A
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
2637
1250
17
23.4
-
-
-
-
pF
Version 3.0
2018
2
www.lonten.cc
LSB60R180HT/ LSC60R180HT/ LSD60R180HT
/ LSE60R180HT/ LSF60R180HT/LSNC60R180HT
LonFET
Rise time
Turn-off delay time
Fall time
t
r
t
d(off)
t
f
R
G
= 10Ω, V
GS
=15V
-
-
-
33
121
7.5
-
-
-
ns
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=10A,
V
GS
=0 to 10 V
-
-
-
-
8
10
30
5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=10A
V
R
=50 V, I
F
=10A,
dI
F
/dt=100 A/μs
-
-
-
-
-
285
4.1
28.4
1.2
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 5A, V
DD
=60V, Starting T
j
= 25°
C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 3.0
2018
3
www.lonten.cc
LSB60R180HT/ LSC60R180HT/ LSD60R180HT
/ LSE60R180HT/ LSF60R180HT/LSNC60R180HT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
V
GS
=7V
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
V
GS
=6.5V
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
Figure 2. Transfer Characteristics
T
c
= 25°C
Drain current I
D
(A)
V
GS
=6V
Drain current I
D
(A)
T
c
= 125°C
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10V
T
c
= 25°C
Pulse test
V
th
, (Normalized)
Gate threshold voltage
R
DS (on)
(Ω)
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
V
GS
=10 V
I
DS
=10 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
Version 3.0
2018
4
www.lonten.cc
LSB60R180HT/ LSC60R180HT/ LSD60R180HT
/ LSE60R180HT/ LSF60R180HT/LSNC60R180HT
LonFET
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characterist
C
iss
C
oss
Gate-Source Voltage V
GS
(V)
Capacitance (pF)
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
I
D
= 10A
Notes:
f = 1 MHz
V
GS
=0 V
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-247/TO-263/TO-220/TO-262/DFN8*8
10us
100us
10us
100us
Drain current I
D
(A)
1ms
Drain current I
D
(A)
Limited by R
1ms
DS(on)
Limited by R
DS(on)
DC
DC
Notes:
T = 25°C
c
j
Notes:
T = 25°C
c
j
T = 150°C
Single Pulse
T = 150°C
Single Pulse
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Figure 10.2 Power Dissipation vs. Temperature
TO-247/TO-263/TO-220/TO-262/DFN8*8
Drain power dissipation P
D
(W)
Drain power dissipation P
D
(W)
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 3.0
2018
5
www.lonten.cc
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