LNH06R062/LNG06R062
Lonten N-channel 60V, 100A, 6.2mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
effect
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
R
DS(on).max
@ V
GS
=10V
I
D
60V
6.2mΩ
100A
Pin Configuration
Features
60V,100A,R
DS(on).max
=6.2mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
D
TO-251
TO-252
G
S
Applications
Motor Drives
UPS
DC-DC Converter
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25° )
1)
C
Continuous drain current ( T
C
= 100° )
1)
C
Pulsed drain current
2)
Gate-Source voltage
Avalanche energy
3)
Power Dissipation ( T
C
= 25° )
C
Storage Temperature Range
Operating Junction Temperature Range
T
C
= 25° unless otherwise noted
C
Symbol
V
DSS
I
D
Value
60
100
76
Unit
V
A
A
A
V
mJ
W
°
C
°
C
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
400
±20
259
110
-55 to +150
-55 to +150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
θJC
R
θJA
Symbol
Value
1.13
65
Unit
°
C/W
°
C/W
Version 1.2, 2016
1
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LNH06R062/LNG06R062
Package Marking and Ordering Information
Device
LNH06R062
LNG06R062
Device Package
TO-251
TO-252
Marking
LNH06R062
LNG06R062
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
Forward transconductance
T
J
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=60 V, V
GS
=0 V, T
J
= 25°
C
V
DS
=60 V, V
GS
=0 V, T
J
= 125°
C
60
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
4.5
6.7
56
---
3.0
1
5
100
-100
6.2
10
---
V
V
μA
μA
nA
nA
mΩ
mΩ
S
I
GSSF
I
GSSR
R
DS(on)
V
GS
=20 V, V
DS
=0 V
V
GS
=-20 V, V
DS
=0 V
V
GS
=10 V, I
D
=20 A
V
GS
=4.5 V, I
D
=10 A
g
fs
V
DS
=5 V , I
D
=50A
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
V
DS
= 30 V, V
GS
= 0 V,
C
oss
F = 1MHz
C
rss
t
d(on)
t
r
V
DD
= 30V,V
GS
=10V, I
D
= 10A
t
d(off)
t
f
R
g
V
GS
=0V, V
DS
=0V, F=1MHz
---
---
---
50
36
2.44
---
---
---
Ω
---
---
---
192
15
13
---
---
---
ns
---
393
---
pF
---
6080
---
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
V
DS
=30 V, I
D
=40A,
Q
gd
V
GS
= 10 V
Q
g
---
130
---
---
37.9
---
nC
---
26.6
---
Drain-Source diode characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
4)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V, I
S
=40A, T
J
=25℃
I
S
=40A, di/dt=100A/us,
T
J
=25℃
---
---
---
---
---
---
---
0.95
50
80
100
400
1.4
---
---
A
A
V
ns
nC
Notes:
1: The maximum junction current rating is package limited.
2: Repetitive Rating: Pulse width limited by maximum junction temperature.
3: V
DD
=50V, V
GS
=10V, L=0.1mH, I
AS
=72A, R
G
=25Ω, Starting T
J
=25℃.
4: Pulse Test：Pulse Width
≤300μs,
Duty Cycle≤2％.
Version 1.2, 2016
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LNH06R062/LNG06R062
Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
Characteristics
Figure 4. Gate Charge Waveform
Figure 5. Body-Diode Characteristics
Version 1.2, 2016
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LNH06R062/LNG06R062
Figure 6. Normalized Maximum Transient Thermal Impedance (RthJC)
Figure 7. Normalized Maximum Transient Thermal Impedance (RthJA)
Version 1.2, 2016
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LNH06R062/LNG06R062
Test Circuit & Waveform
Figure 8. Gate Charge Test Circuit & Waveform
Figure 9. Resistive Switching Test Circuit & Waveforms
Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
Figure 11. Diode Recovery Circuit & Waveform
Version 1.2, 2016
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