LSGN03R020/LSGG03R020/LSGC03R020
Lonten N-channel 30V, 120A, 2.0mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
I
D
30V
2.0mΩ
120A
effect transistors are using split gate trench DMOS R
DS(on),max
@ V
GS
=10V
Pin Configuration
Features
30V,120A, R
DS(on),max
=2.0mΩ@V
GS
= 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
PPAK5×6
TO-252
D
G
S
Applications
Motor Drives
UPS
DC-DC Converter
T
C
= 25°C unless otherwise noted
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25°C )
1)
Continuous drain current ( T
C
= 100°C )
1)
Pulsed drain current
2)
Gate-Source voltage
Avalanche energy
3)
Power Dissipation ( T
C
= 25°C )
Storage Temperature Range
Operating Junction Temperature Range
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
Value
30
120
101
360
±18
225
42.14
-55 to +150
-55 to +150
Unit
V
A
A
A
V
mJ
W
°C
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Symbol
R
θJC
Value
1.67
Unit
°C/W
Version 3.0,Dce-2019
1
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Package Marking and Ordering Information
Device
LSGN03R020
LSGG03R020
LSGC03R020
LSGN03R020/LSGG03R020/LSGC03R020
Marking
LSGN03R020
LSGG03R020
LSGC03R020
Device Package
DFN5X6
TO-252
TO-220
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
-
DFN5×6/TO-220
-TO-252
Forward transconductance
T
J
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSSF
I
GSSR
Test Condition
V
GS
=0 V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=30 V, V
GS
=0V, T
J
= 25°C
V
GS
=18 V, V
DS
=0 V
V
GS
=-18 V, V
DS
=0 V
Min.
30
1.1
---
---
---
Typ.
---
1.5
---
---
---
Max.
---
2.2
1
100
-100
Unit
V
V
μA
nA
nA
R
DS(on)
V
GS
=10 V, I
D
=30 A
---
---
1.5
1.6
60
2.0
2.1
---
mΩ
mΩ
S
g
fs
V
DS
=10V , I
D
=60A
---
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15V,V
GS
=10V, I
D
= 15A
R
G
=10Ω
V
DS
= 15 V, V
GS
= 0 V,
F = 1MHz
---
---
---
---
---
---
---
3410
1830
112
22
15
130
47
---
---
---
---
---
---
---
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DS
=15V, I
D
=15A,
V
GS
= 10 V
---
---
---
8.5
9.5
50
---
---
---
nC
Drain-Source diode characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
4)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V, I
S
=40A, T
J
=25℃
I
S
=I
F
, di/dt=100A/us, T
J
=25℃
5)
---
---
---
---
---
---
---
0.85
---
---
120
360
1.2
80
80
A
A
V
ns
nC
Notes:
1: The maximum junction current rating is package limited.
2: Repetitive Rating: Pulse width limited by maximum junction temperature.
3: V
DD
=23V, V
GS
=10V, L=0.5mH, I
AS
=30A, R
G
=25Ω, Starting T
J
=25℃.
4: Pulse Test：Pulse Width
≤300μs,
Duty Cycle≤2％.
5: Guaranteed by design, not subject to production.
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Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
LSGN03R020/LSGG03R020/LSGC03R020
Figure 2. Transfer Characteristics
40
V
DS
=5V
30
45
I
DS
-Drain to Source Current(A)
35
30
25
20
15
10
5
V
GS
=4V
V
GS
=4.5V
V
GS
=10V
V
GS
=3.5V
V
GS
=3V
I
DS
- Drain to Source Current (A)
40
20
T=125°C
T=25
C
T=125
C
T=25°C
10
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V
DS
- Drain to Source Voltage(V)
Figure 3. Capacitance Characteristics
V
GS
- Gate to Source Voltage(V)
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
- Gate to Source Voltage (V)
Figure 4. Gate Charge Waveform
10
9
8
7
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
V
DD
=15V
I
D
=15A
C
iss
Notes:
f = 1 MHz
V
GS
=0 V
C
oss
C
rss
Drain-Source Voltage V
DS
(V)
Qg(nC)
Figure 5. Body-Diode Characteristics
40
3.0
R
DS(on)
- On-Resistance(mohm)
Figure 6. Rdson-Drain Current
I
S
- Source to Drain Current(A)
2.5
2.0
1.5
1.0
0.5
0.0
0
5
V
GS
=10V
10 15 20 25 30 35 40 45 50
I
DS
- Drain to Source Current(A)
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30
20
T=25
C
10
T=125
C
0
0.4
0.6
0.8
1.0
V
SD
- Source to Drain Voltage(V)
Version 3.0,Dce-2019
3
LSGN03R020/LSGG03R020/LSGC03R020
1.8
Normalized On-Resistance
Figure 7. Rdson-Junction Temperature(℃)
Figure 8. Maximum Safe Operating Area
1.6
1.4
1.2
1.0
0.8
0.6
-50
V
GS
=10V
I
D
=30A
Notes:
Tc=25℃
T
j
=150℃
Single Pulse
10us
100us
1ms
10ms
DC
-25
0
25
50
75
o
100 125 150
Temperature( C)
Figure 9. On-Resistance vs. Gate-to-Source voltage
I
D
= 30A
Figure 10. BVdss vs. Junction temperature
1.10
Normalized Drain to Source Voltage
I
D
=250uA
1.05
1.00
0.95
0.90
-50
-25
0
25
50
75
o
100
125
150
Gate−source voltage V
GS
(V)
Temperature( C)
Figure 11. Normalized Maximum Transient Thermal Impedance (RthJC)
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LSGN03R020/LSGG03R020/LSGC03R020
Test Circuit & Waveform
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
Figure 15. Diode Recovery Circuit & Waveform
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