LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/ LSE65R280HT
LonFET
Lonten N-channel 650V, 15A, 0.28Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated using
advanced super junction technology.
The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
700V
0.28Ω
45A
19 nC
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 19 nC)
100% UIS tested
RoHS compliant
G
S
N-Channel MOSFET
Pb
TO-251
TO-252
TO-220
TO-220MF
D
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche current, repetitive
3)
Power Dissipation TO-251/ TO-252 ( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-220MF ( T
C
= 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
I
AR
V
DSS
I
D
Symbol
Value
650
15
9.8
45
±30
400
15
130
1.04
33.2
0.27
-55 to +150
15
45
Unit
V
A
A
A
V
mJ
A
W
W/°C
W
W/°C
°C
A
A
Version 1.1,Sep-2019
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LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/ LSE65R280HT
LonFET
Thermal Characteristics TO-251/TO-252/TO-220
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
0.96
110
260
Unit
°C/W
°C/W
°C
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
3.7
61
260
Unit
°C/W
°C/W
°C
Package Marking and Ordering Information
Device
LSD65R280HT
LSG65R280HT
LSH65R280HT
LSF65R280HT
LSE65R280HT
Device Package
TO-220MF
TO-252
TO-251
TO-262
TO-263
Marking
LSD65R280HT
LSG65R280HT
LSH65R280HT
LSF65R280HT
LSE65R280HT
72
50
50
800
Units/Tube
50
2500
Units/Tube
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=650 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
650
2.5
Typ.
-
3.5
Max.
-
4.5
Unit
V
V
μA
-
-
-
-
-
-
-
-
10
-
-
5
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=7.5 A
T
j
= 25°C
T
j
= 150°C
0.24
0.62
0.28
-
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 400V, I
D
= 7.5A
R
G
= 10Ω, V
GS
=15V
V
DS
= 100 V, V
GS
= 0 V,
f = 250 kHz
-
-
-
-
-
-
1040
41.5
1.5
19
33
70
11
-
-
-
-
-
-
-
ns
pF
Version 1.1,Sep-2019
Fall time
2
-
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LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/ LSE65R280HT
LonFET
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V, I
D
=7.5A,
V
GS
=0 to 10 V
-
-
-
-
6.0
6.0
19
5.5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=7.5A
V
R
=400 V, I
F
=7.5A,
dI
F
/dt=100 A/μs
-
-
-
-
1.2
240
2.8
23
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 4A, V
DD
= 60V, Starting T
j
= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
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LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/ LSE65R280HT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
V
GS
=7V
V
GS
=6.5V
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
T
C
=25℃
V
GS
=6V
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=7.5 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
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LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/ LSE65R280HT
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
C
oss
Notes:
f = 250 kHz
V
GS
=0 V
I
D
= 7.5A
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-251/TO-252/ TO-262
10us
100us
1ms
DC
Limited by R
ds(on)
Limited by R
ds(on)
DC
10us
1ms 100us
Notes:
T
C
=25℃
T
J
=150℃
Single Pulse
Notes:
T
C
=25℃
T
J
=150℃
Single Pulse
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Figure 10.2 Power Dissipation vs. Temperature
TO-251/TO-252/ TO-262
Case temperature T
c
(°C)
Case temperature T
c
(°C)
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