LSGH08R060W3/LSGG08R060W3
Lonten N-channel 85V, 80A, 6.0mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
I
D
85V
6.0mΩ
80A
effect transistors are using split gate trench DMOS R
DS(on).max
@ V
GS
=10V
Pin Configuration
Features
85V,80A,R
DS(ON).max
=6.0mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
TO-251
TO-252
G
D
Applications
S
N-Channel MOSFET
Motor Drives
UPS
DC-DC Converter
= 25°C unless otherwise noted
Absolute Maximum Ratings
T
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25°C )
1)
Continuous drain current ( T
C
= 100°C )
1)
Pulsed drain current
2)
Gate-Source voltage
Avalanche energy, single pulse
3)
Power Dissipation ( T
C
= 25°C )
Storage Temperature Range
Operating Junction Temperature Range
C
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
Value
85
80
65
240
±20
100
96
-55 to +150
-55 to +150
Unit
V
A
A
A
V
mJ
W
°C
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Value
1.3
68
Unit
°C/W
°C/W
Version 1.1, Jan-2020
1
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LSGH08R060W3/LSGG08R060W3
Package Marking and Ordering Information
Device
LSGG08R060W3
LSGH08R060W3
Device Package
TO-252
TO-251
T
J
= 25°C unless otherwise noted
Marking
SGG08R060W3
SGH08R060W3
Min.
85
2.0
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Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=85 V, V
GS
=0 V, T
J
= 25°C
V
DS
=85 V, V
GS
=0 V, T
J
= 125°C
Typ.
---
3.0
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4.9
84.2
Max.
---
4.0
1
5
100
-100
6.0
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Unit
V
V
μA
μA
nA
nA
mΩ
S
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
Forward transconductance
I
GSSF
I
GSSR
R
DS(on)
g
fs
V
GS
=20 V, V
DS
=0 V
V
GS
=-20 V, V
DS
=0 V
V
GS
=10 V, I
D
=50 A
V
DS
=5 V , I
D
=50A
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
R
g
V
GS
=0V, V
DS
=0V, F=1MHz
V
DD
= 40V,V
GS
=10V, I
D
= 13A
V
DS
= 40 V, V
GS
= 0 V,
F = 1MHz
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3948
888
9
20.1
38.9
45.1
22.8
4.0
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Ω
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DS
=40 V, I
D
=50A,
V
GS
= 10 V
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16
10
46
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nC
Drain-Source diode characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
4)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V, I
S
=50A, T
J
=25℃
I
S
=20A, di/dt=60A/us, T
J
=25℃
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0.95
107
123
80
240
1.4
---
---
A
A
V
ns
nC
Notes:
1: The maximum junction current rating is package limited.
2: Repetitive Rating: Pulse width limited by maximum junction temperature.
3: V
DD
=50V, V
GS
=10V, L=0.5mH, I
AS
=20A, R
G
=25Ω, Starting T
J
=25℃.
4: Pulse Test：Pulse Width
≤300μs,
Duty Cycle≤2％.
Version 1.1, Jan-2020
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Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
LSGH08R060W3/LSGG08R060W3
Figure 2. Transfer Characteristics
Figure 3. Capacitance
Characteristics
Figure 4. Gate Charge Waveform
Figure 5. Body-Diode Characteristics
Figure 6. Rdson-Drain Current
Version 1.1, Jan-2020
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LSGH08R060W3/LSGG08R060W3
Figure 7. Rdson-Junction Temperature(℃)
Figure 8. Maximum Safe Operating Area
Figure 9. Normalized Maximum Transient Thermal Impedance (RthJC)
Version 1.1, Jan-2020
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Test Circuit & Waveform
Figure 10. Gate Charge Test Circuit & Waveform
LSGH08R060W3/LSGG08R060W3
Figure 11. Resistive Switching Test Circuit & Waveforms
Figure 12. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
Figure 13. Diode Recovery Circuit & Waveform
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FPGA/CPLD
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