LSC80R980GT/LSD80R980GT/LSE80R980GT/
LSF80R980GT/LSG80R980GT/LSH80R980GT
LonFET
Lonten N-channel 800V, 5A, 0.98Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated using
advanced super junction technology.
The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
850V
0.98Ω
5A
14.5nC
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 14.5nC)
100% UIS tested
RoHS compliant
G
S
N-Channel MOSFET
Pb
D
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche current, repetitive
3)
Power Dissipation TO-220MF ( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-220/TO-252/TO-263
( T
C
= 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
50
0.4
-55 to +150
5
15
W
W/°C
°C
A
A
I
DM
V
GSS
E
AS
I
AR
V
DSS
I
D
Symbol
Value
800
5
3
15
±30
120
5
29
0.23
Unit
V
A
A
A
V
mJ
A
W
W/°C
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LSC80R980GT/LSD80R980GT/LSE80R980GT/
LSF80R980GT/LSG80R980GT/LSH80R980GT
LonFET
Thermal Characteristics TO-220/TO-252/TO-263
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
2.5
62
260
Unit
°C/W
°C/W
°C
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
4.3
80
260
Unit
°C/W
°C/W
°C
Package Marking and Ordering Information
Device
LSC80R980GT
LSD80R980GT
LSE80R980GT
LSF80R980GT
LSG80R980GT
LSH80R980GT
Device Package
TO-220
TO-220MF
TO-263
TO-262
TO-252
TO-251
Marking
LSC80R980GT
LSD80R980GT
LSE80R980GT
LSF80R980GT
LSG80R980GT
LSH80R980GT
72
50
2500
Units/Tube
50
50
800
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=800 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
800
2.5
Typ.
-
3.5
Max.
-
4.5
Unit
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=2.5 A
T
j
= 25°C
T
j
= 150°C
0.85
1.9
7.5
0.98
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
C
iss
C
oss
C
rss
V
DS
= 100 V, V
GS
= 0 V,
f = 250 kHz
-
-
-
614
20
2
-
-
-
pF
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LSC80R980GT/LSD80R980GT/LSE80R980GT/
LSF80R980GT/LSG80R980GT/LSH80R980GT
LonFET
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 400V, I
D
= 2.5A
R
G
= 10Ω, V
GS
=10V
-
-
-
-
13.5
30
56
27
-
-
-
-
ns
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=640 V, I
D
=2.5A,
V
GS
=0 to 10 V
-
-
-
-
3.5
5.5
14.5
5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=2.5A
V
R
=50 V, I
F
=2.5A,
dI
F
/dt=100 A/μs
-
-
-
-
-
250
1.69
13.5
1.4
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 2A, V
DD
= 60V, Starting T
j
= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
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LSC80R980GT/LSD80R980GT/LSE80R980GT/
LSF80R980GT/LSG80R980GT/LSH80R980GT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
V
GS
=10V
V
GS
=7V
V
GS
=6.5V
T
C
=125℃
V
GS
=6V
Figure 2. Transfer Characteristics
Common Source
V
DS
=20 V
Pulse test
Common Source
T
c
= 25°C
Pulse test
T
C
=25℃
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
V
GS
= 10V
Figure 4. Threshold Voltage vs. Temperatur
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=3.5 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
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LSC80R980GT/LSD80R980GT/LSE80R980GT/
LSF80R980GT/LSG80R980GT/LSH80R980GT
LonFET
Figure 7. Capacitance Characteristics
Notes:
f = 250 kHz
V
GS
=0 V
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
V
DS
=640 V
I
DS
= 2.5A
C
iss
C
oss
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-220/TO-252/TO-263
10us
10us
Limited by Rdson
100us
1ms
DC
Limited by Rdson
100us
1ms
DC
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Figure 10.2 Power Dissipation vs. Temperature
TO-220/TO-252/TO-263
Case temperature T
c
(°C)
Case temperature T
c
(°C)
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