LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GT
LonFET
Lonten N-channel 800V, 15A, 0.35Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated using
advanced super junction technology.
The
resulting device has extremely low on resistance,
making it especially suitable for applications which
require superior power density and outstanding
efficiency.
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
850V
0.35Ω
45A
39 nC
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 39 nC)
100% UIS tested
RoHS compliant
TO-247
TO-220MF
TO-263
TO-220 TO-262
D
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche current, repetitive
3)
Power Dissipation TO-247 ( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-220MF ( T
C
= 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
I
AR
V
DSS
I
D
Symbol
Value
800
15
9.8
45
±30
400
15
160
1.28
33
0.26
-55 to +150
15
45
Unit
V
A
A
A
V
mJ
A
W
W/°C
W
W/°C
°C
A
A
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LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GT
LonFET
Thermal Characteristics TO-247/TO-263/TO-262/TO-220
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
0.78
76
260
Unit
°C/W
°C/W
°C
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
3.79
84
260
Unit
°C/W
°C/W
°C
Package Marking and Ordering Information
Device
LSB80R350GT
LSC80R350GT
LSD80R350GT
LSE80R350GT
LSF80R350GT
Device Package
TO-247
TO-220
TO-220MF
TO-263-2L
TO-262
Marking
LSB80R350GT
LSC80R350GT
LSD80R350GT
LSE80R350GT
LSF80R350GT
50
Units/Tube
30
50
50
800
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=800 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
800
2.5
Typ.
-
3.5
Max.
-
4.5
Unit
V
V
μA
-
-
-
-
-
-
-
-
10
-
-
5
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=7.5 A
T
j
= 25°C
T
j
= 150°C
0.28
0.73
0.35
-
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 400V, I
D
= 7.5A
R
G
= 10Ω, V
GS
=15V
V
DS
= 100 V, V
GS
= 0 V,
f = 250 kHz
-
-
-
-
-
-
820
42
1.93
23
37
93
13
-
-
-
-
-
-
-
ns
pF
Version 1.1,Sep-2019
Fall time
2
-
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LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GT
LonFET
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V, I
D
=7.5A,
V
GS
=0 to 10 V
-
-
-
-
11.5
12
39
5.8
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=7.5A
V
R
=400 V, I
F
=7.5A,
dI
F
/dt=100 A/μs
-
-
-
-
1.2
325
4.4
27
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 4A, V
DD
= 60V, Starting T
j
= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
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LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
V
GS
=7V
V
GS
=6.5V
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
T
C
=25℃
T
C
=125℃
V
GS
=6V
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=7.5 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
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LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GT
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
C
oss
Notes:
f = 250 kHz
V
GS
=0 V
I
D
= 7.5A
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-247/TO-263/TO-220/TO-262
10us
100us
1ms
DC
Limited by R
ds(on)
Notes:
T
C
=25℃
T
J
=150℃
Single Pulse
Notes:
T
C
=25℃
T
J
=150℃
Single Pulse
10us
100us
1ms
Limited by R
ds(on)
DC
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Figure 10.2 Power Dissipation vs. Temperature
TO-247/TO-263/TO-220/TO-262
Case temperature T
c
(°C)
Case temperature T
c
(°C)
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