LSG60R2K5HT/ LSH60R2K5HT
LonFET
Lonten N-channel 600V, 1.9A, 2.5Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated using
advanced super junction technology.
The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
650V
2.5Ω
5.7A
4.7nC
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Qg = 4.7nC)
100% UIS tested
RoHS compliant
G
S
N-Channel MOSFET
Pb
TO-251
TO-252
D
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation TO-252/ TO-251 ( T
C
= 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
I
DM
V
GSS
E
AS
E
AR
I
AR
P
D
V
DSS
I
D
Symbol
Value
600
1.9
1.2
5.7
±30
30
0.1
1.9
18
0.15
-55 to +150
1.9
5.7
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
°C
A
A
Thermal Characteristics TO-252
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
R
θJC
R
θJA
T
sold
Symbol
Value
6.7
102
260
Unit
°C/W
°C/W
°C
Version 1.3,Jan-2020
at leads. (1.6mm from case for 10s)
1
www.lonten.cc
LSG60R2K5HT/ LSH60R2K5HT
LonFET
Package Marking and Ordering Information
Device
LSH60R2K5HT
LSG60R2K5HT
Device Package
TO-251
TO-252
Marking
LSH60R2K5HT
LSG60R2K5HT
Units/Tube
72
2500
Units/Reel
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=600 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
600
2.5
Typ.
-
3.5
Max.
-
4.5
Unit
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=0.95 A
T
j
= 25°C
T
j
= 150°C
2.2
5.6
9
2.5
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 300V, I
D
= 0.95A
R
G
= 10Ω, V
GS
=10V
V
DS
= 100 V, V
GS
= 0 V,
f = 250 kHz
-
-
-
-
-
-
-
114
6.1
0.76
11.8
30
38.8
65.4
-
-
-
-
-
-
-
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=0.95A,
V
GS
=0 to 10 V
-
-
-
-
1.5
2.0
4.7
5.5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=0.95A
V
R
=400 V, I
F
=1.9A,
dI
F
/dt=100 A/μs
-
-
-
-
1.1
190
1.2
6.2
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 2A, V
DD
= 60V, Starting T
j
= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 1.3,Jan-2020
2
www.lonten.cc
LSG60R2K5HT/ LSH60R2K5HT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
V
GS
=7V
V
GS
=6.5V
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
T
c
= 25°C
T
c
= 125°C
V
GS
=6V
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=1 A
Pulse test
Version 1.3,Jan-2020
Junction temperature T
j
(°C)
3
Junction temperature T
j
(°C)
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LSG60R2K5HT/ LSH60R2K5HT
LonFET
Figure 7. Capacitance Characteristics
Notes:
f = 250 kHz
V
GS
=0 V
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
C
oss
C
rss
I
D
=
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9. Maximum Safe Operating Area
Figure 10. Power Dissipation vs. Temperature
100us
Limited by R
DS(on)
DC
1ms
10us
Notes:
T
c
= 25°C
T
j
= 150°C
Single Pulse
Drain-Source Voltage V
DS
(V)
Case temperature T
c
(°C)
Version 1.3,Jan-2020
4
www.lonten.cc
LSG60R2K5HT/ LSH60R2K5HT
LonFET
Gate Charge Test Circuit & Waveform
Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Version 1.3,Jan-2020
5
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