LSD65R930GT/LSG65R930GT/ LSH65R930GT
LonFET
Lonten N-channel 650V, 4A, 930mΩ LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated using
advanced super junction technology.
resulting
device
has
extremely
low
The
on
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
700V
930mΩ
12A
13.6nC
resistance, making it especially suitable for
applications which require superior power
density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 13.6nC)
100% UIS tested
RoHS compliant
TO-251
TO-252
TO-220MF
D
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation TO-220MF ( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-251/ TO-252( TC = 25°C )
- Derate above 25°C
Mounting torque To-220MF ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
650
4
2.5
12
±30
120
0.6
4
29
0.23
50
0.4
50
-55 to +150
4
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
W
W/°C
Ncm
°C
A
Version 3.1,Sep- 2019
Diode pulse current
1
12
www.lonten.cc
A
LSD65R930GT/LSG65R930GT/ LSH65R930GT
LonFET
Thermal Characteristics TO-251/TO-252
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
2.5
62
260
Unit
°C/W
°C/W
°C
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
4.3
80
260
Unit
°C/W
°C/W
°C
Package Marking and Ordering Information
Device
LSD65R930GT
LSG65R930GT
LSH65R930GT
Device Package
TO-220MF
TO-252
TO-251
Marking
LSD65R930GT
LSG65R930GT
LSH65R930GT
72
Units/Tube
50
2500
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=650 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
650
2.5
Typ.
-
3.5
Max.
-
4.5
Unit
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
50
-50
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=2A
T
j
= 25°C
T
j
= 150°C
0.82
1.9
8
0.93
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 300 V, I
D
= 2 A
R
G
= 12Ω, V
GS
=10 V
V
DS
= 100 V, V
GS
= 0 V,
f = 250 kHz
-
-
-
-
-
-
349
15.9
1.73
18.9
23
43.6
11.5
-
-
-
-
-
-
-
ns
pF
Version 3.1,Sep- 2019
Fall time
2
-
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LSD65R930GT/LSG65R930GT/ LSH65R930GT
LonFET
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=2 A,
V
GS
=0 to 10 V
-
-
-
-
4.1
5.7
13.6
6
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=2 A
V
R
=50 V, I
F
=4 A,
dI
F
/dt=100 A/μs
-
-
-
-
1.0
216
1.4
13
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 2A, V
DD
= 60V, Starting T
j
= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 3.1,Sep- 2019
3
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LSD65R930GT/LSG65R930GT/ LSH65R930GT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
V
GS
=7V
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
V
GS
=6.5V
V
GS
=6V
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=2 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
Version 3.1,Sep- 2019
4
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LSD65R930GT/LSG65R930GT/ LSH65R930GT
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes:
f = 250 kHz
V
GS
=0 V
Figure 8. Gate Charge Characterist
C
iss
C
oss
I
D
=2A
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-251/TO-252
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Figure 10.2 Power Dissipation vs. Temperature
TO-251/TO-252
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 3.1,Sep- 2019
5
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