LNC4N60\LND4N60\LNG4N60\LNH4N60
Lonten N-channel 600V, 4A Power MOSFET
Description
The Power MOSFET is fabricated using the
advanced
planar
VDMOS
technology.
The
resulting device has low conduction resistance,
superior switching performance and high avalance
energy.
Product Summary
V
DSS
I
D
R
DS(on),max
Q
g,typ
600V
4A
2.4Ω
12.8 nC
Features
Low R
DS(on)
Low gate charge (typ. Q
g
= 12.8 nC)
100% UIS tested
RoHS compliant
G
TO-251
TO-252
TO-220
TO-220F
D
Applications
Power faction correction.
Switched mode power supplies.
LED driver.
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Peak diode recovery dv/dt
3)
Power Dissipation
TO-220F ( T
C
= 25° )
C
Derate above 25°
C
Power Dissipation
TO-220\TO-251\TO-252 ( T
C
= 25° )
C
Derate above 25°
C
Operating juncition and storage temperature range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
77
0.61
-55 to +150
4
16
W
W/°
C
°
C
A
A
I
DM
V
GSS
E
AS
dv/dt
V
DSS
I
D
Symbol
Value
600
4
2.5
16
±30
245
5
32
0.26
Unit
V
A
A
A
V
mJ
V/ns
W
W/°
C
Thermal Characteristics
Parameter
Thermal resistance, Junction-to-case
Thermal resistance, Junction-to-ambient
Symbol
R
θJC
R
θJA
Value
TO-220F
3.8
62.5
TO-220\TO-251\TO-252
1.62
110
Unit
°
C/W
°
C/W
Version 1.1
2018
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LNC4N60\LND4N60\LNG4N60\LNH4N60
Package Marking and Ordering Information
Device
LNC4N60
LND4N60
LNG4N60
LNH4N60
Device Package
TO-220
TO-220F
TO-252
TO-251
Marking
LNC4N60
LND4N60
LNG4N60
LNH4N60
80
Units/Tube
50
50
3000
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25 mA
V
DS
=600 V, V
GS
=0 V,
T
j
= 25°
C
T
j
= 125°
C
600
2
-
-
-
4
V
V
-
-
-
-
-
-
1
100
μA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=2 A
-
-
2.0
100
-100
2.4
nA
nA
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 300 V, I
D
= 4 A
R
G
= 10 Ω, V
GS
=15 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
-
580
50
3
13
31
38
17
-
-
-
-
-
-
-
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=4 A,
V
GS
=0 to 10 V
-
-
-
-
3.1
5.5
12.8
5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=4 A
V
R
=400 V, I
F
=4 A,
dI
F
/dt=100 A/μs
-
-
-
-
-
275
1.43
10.4
1.5
-
-
-
V
ns
μC
A
Notes:
1. Pulse width limited by maximum junction temperature.
2. L=10mH, I
AS
= 7A, Starting T
j
= 25°
C.
3. I
SD
= 4A, di/dt≤100A/us, V
DD
≤BV
DS
, Starting T
j
= 25°
C.
Version 1.1
2018
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LNC4N60\LND4N60\LNG4N60\LNH4N60
Electrical Characteristics Diagrams
Figure 1. Typical Output Characteristics
V
GS
=10V
V
GS
=9V
V
GS
=8V
V
GS
=6V
T
c
= 25°C
Figure 2. Transfer Characteristics
I
D
, Drain current (A)
V
GS
=7V
V
GS
=5.5V
I
D
, Drain current (A)
T
c
= 150°C
V
DS
,Drain−source voltage (V)
V
GS
,Gate−source voltage (V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
R
DS (on)
, Drain-Source
On-Resistance
V
GS
= 10 V
T
c
= 25°C
Pulse test
V
th
, (Normalized)
Gate threshold voltage
(Ω)
I
DS
=0.25 mA
Pulse test
I
D
,Drain current (A)
T
j
,Junction temperature (°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=2 A
Pulse test
T
j
,Junction temperature (°C)
T
j
,Junction temperature (°C)
Version 1.1
2018
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LNC4N60\LND4N60\LNG4N60\LNH4N60
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characterist
V
DS
=300V
V
GS
,Gate-Source Voltage (V)
Capacitance (pF)
V
DS
=120V
V
DS
=480V
C
iss
Notes:f = 1 MHz,V
GS
=0 V
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
oss
C
rss
I
D
= 4 A
V
DS
,Drain-Source Voltage (V)
Q
G
,Total Gate Charge (nC)
Figure 9. Maximum Safe Operating Area
TO-220F
Figure 10. Maximum Safe Operating Area
TO-220/TO-251/TO-252
100us
100us
I
D
,Drain current (A)
10ms
Limited by R
DS(on)
1ms
I
D
,Drain current (A)
1ms
10ms
Limited by R
DC
DS(on)
DC
Notes:
T = 25°C
c
j
Notes:
T = 25°C
c
j
T = 150°C
Single Pulse
T = 150°C
Single Pulse
V
DS
,Drain-Source Voltage (V)
V
DS
,Drain-Source Voltage (V)
Figure 11. Power Dissipation vs. Temperature
TO-220F
Figure 12. Power Dissipation vs. Temperature
TO-220/TO-251/TO-252
P
D
,power dissipation, (W)
T
c
,Case temperature (°C)
P
D
,power dissipation, (W)
T
c
,Case temperature (°C)
Version 1.1
2018
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LNC4N60\LND4N60\LNG4N60\LNH4N60
Figure 13. Continuous Drain Current vs. Temperature
Figure 14. Body Diode Transfer Characteristics
I
SD
,Reverse Drain Current
（A）
I
D
,Drain current (A)
T
c
= 150°
C
T
c
= 25°C
T
c
,Case temperature (°C)
V
SD
,Source-Drain Voltage (V)
Figure 15 Transient Thermal Impendance,Junction to Case, TO-220F
Normalized Transient
Thermal Resistance
θJC
P
DM
t
Z
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
Duty = t/T
T
Z (t)=3.8°C/W Max.
θJC
t ,Pulse Width (s)
Figure 16. Transient Thermal Impendance,Junction to Case, TO-220/TO-251/TO-252
Normalized Transient
Thermal Resistance
P
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
DM
t
Duty = t/T
T
Z (t)=1.62°C/W Max.
θJC
Z
θJC
t ,Pulse Width (s)
Version 1.1
2018
5
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