LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT
LonFET
Lonten N-channel 700V, 11A, 0.45Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
750V
0.45Ω
30A
23nC
junction
technology.
The
Power MOSFET is fabricated using
super
advanced
resulting device has extremely low on resistance,
making it especially suitable for applications which
require superior power density and outstanding
efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 23nC)
100% UIS tested
RoHS compliant
TO-220MF
TO-263
TO-262
TO-251
TO-252
D
Applications
G
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation
TO-220MF ( T
C
= 25° )
C
- Derate above 25°
C
P
D
Power Dissipation
TO-262 ( T
C
= 25° )
C
- Derate above 25°
C
Mounting torque To-262 ( M3 and M3.5 screws )
Mounting torque To-220MF ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
125
1
60
Ncm
50
-55 to +150
11
30
°
C
A
A
W
W/°
C
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
700
11
7
30
±30
270
0.5
11
33
0.26
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°
C
Version 2.0
2018
1
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LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT
LonFET
Thermal Characteristics TO-262/TO-252/ TO-251/TO-263
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
2.5
62
Unit
°
C/W
°
C/W
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
3.8
80
Unit
°
C/W
°
C/W
Package Marking and Ordering Information
Device
LSD70R450GT
LSE70R450GT
LSF70R450GT
LSG70R450GT
LSH70R450GT
Device Package
TO-220MF
TO-263-2L
TO-262
TO-252
TO-251
Marking
LSD70R450GT
LSE70R450GT
LSF70R450GT
LSG70R450GT
LSH70R450GT
4680
50
2500
2500
Units/Tube
50
800
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=700 V, V
GS
=0 V,
T
j
= 25°
C
T
j
= 125°
C
700
2.5
-
3.5
-
4.5
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
50
-50
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=5.5 A
T
j
= 25°
C
T
j
= 150°
C
0.40
0.94
4.6
0.45
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
V
DD
= 380V, I
D
= 5.5A
R
G
= 4.7Ω, V
GS
=10V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
879
460
6
15
27
69
-
-
-
-
-
-
ns
pF
Version 2.0
2018
2
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LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT
LonFET
Fall time
t
f
-
11
-
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=5.5A,
V
GS
=0 to 10 V
-
-
-
-
6.2
8.5
22.8
5.5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=5.5A
V
R
=50 V, I
F
=11A,
dI
F
/dt=100 A/μs
-
-
-
-
1.0
345
3.8
22
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 3A, V
DD
= 60V, Starting T
j
= 25°
C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 2.0
2018
3
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LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
Drain current I
D
(A)
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
V
GS
=7V
V
GS
=6V
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Drain current I
D
(A)
V
GS
=6.5V
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
1.3
1.2
V
th
, (Normalized)
Gate threshold voltage
1.1
1
0.9
0.8
0.7
0.6
0.5
I
DS
=0.25 mA
Pulse test
R
DS (on)
(Ω)
V
GS
= 10V
T
c
= 25°C
Pulse test
Drain current I
D
(A)
-60
-40
-20
0
20
40
60
80
100
120
140
160
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
1.2
Figure 6. On-Resistance vs. Temperature
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
1.1
2
1.5
1
1
0.9
V
GS
=0 V
V
GS
=0 V
I
DS
=0.25 mA
I
DS
=0.25 mA
Pulse test
Pulse test
0.5
0.8
-60
-40
-20
0
20
40
60
80
100 120 140 160
V
GS
=10 V
V
GS
=10 V
I
DS
=3.5 A
I
DS
=5.5 A
Pulse test
Pulse test
0
-60
-40
-20
0
20
40
60
80
100 120 140 160
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
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2018
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LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
C
oss
Notes:
f = 1 MHz
V
GS
=0 V
Gate-Source Voltage V
GS
(V)
Capacitance (pF)
I
D
= 5.5A
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Figure 9.2 Maximum Safe Operating Area
TO-263-2L/TO-262/TO-252/TO-251
Drain current I
D
(A)
Drain-Source Voltage V
DS
(V)
Drain current I
D
(A)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Drain power dissipation P
D
(W)
Figure 10.2 Power Dissipation vs. Temperature
TO-263-2L/TO-262/TO-252/TO-251
Drain power dissipation P
D
(W)
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 2.0
2018
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