LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HT
LonFET
Lonten N-channel 600V, 3A, 1.4Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated using
advanced super junction technology.
The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
650V
1.4Ω
9A
5.8nC
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 5.8nC)
100% UIS tested
RoHS compliant
TO-252
TO-220MF
TO-251
TO-263
D
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Power Dissipation TO-220MF ( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-251/ TO-252 ( TC = 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
E
AR
I
D
Symbol
V
DSS
Value
600
3
2.0
9
±30
67.5
0.4
18
0.15
30
0.24
-55 to +150
3
9
Unit
V
A
A
A
V
mJ
mJ
W
W/°C
W
W/°C
°C
A
A
Thermal Characteristics TO-251/TO-252/TO-262/TO-263
Version 2.0
2019
Parameter
1
Symbol
Value
www.lonten.cc
Unit
LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HT
LonFET
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
4.2
180
260
°C/W
°C/W
°C
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
6.9
128
260
Unit
°C/W
°C/W
°C
Package Marking and Ordering Information
Device
LSD60R1K4HT
LSG60R1K4HT
LSH60R1K4HT
LSE60R1K4HT
Device Package
TO-220MF
TO-252
TO-251
TO-263
Marking
LSD60R1K4HT
LSG60R1K4HT
LSH60R1K4HT
LSE60R1K4HT
Units/Tube
50
72
72
50
2500
4680
800
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=600 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
600
2.5
Typ.
-
3.5
Max.
-
4.5
Unit
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=1.5A
T
j
= 25°C
T
j
= 150°C
1.2
3.1
8
1.4
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 400 V, I
D
= 1.5 A
R
G
= 10Ω, V
GS
=15 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
-
214
74.8
1.51
13.4
26.8
40.6
40.5
-
-
-
-
-
-
-
ns
pF
Gate charge characteristics
Version 2.0
Gate to source charge
2019
Q
gs
V
DD
=400 V, I
D
=1.5 A,
2
-
2.0
www.lonten.cc
-
LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HT
LonFET
Gate to drain charge
Gate charge total
Q
gd
Q
g
V
plateau
V
GS
=0 to 10 V
-
-
-
1.8
5.8
5.5
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=1.5A
V
R
=400 V, I
F
=3 A,
dI
F
/dt=100 A/μs
-
-
-
-
1.0
121
0.6
10
-
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 1.5A, V
DD
= 60V, Starting T
j
= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 2.0
2019
3
www.lonten.cc
LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HT
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
V
GS
=7V
V
GS
=6.5V
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
T=25℃
V
GS
=6V
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=2 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
Version 2.0
2019
4
www.lonten.cc
LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HT
LonFET
Figure 7. Capacitance Characteristics
Notes:
f = 1 MHz
V
GS
=0 V
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
C
oss
C
rss
I
D
=1.5A
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
10us
100us
Figure 9.2 Maximum Safe Operating Area
TO-251/TO-252
1ms
Limited by R
10us
Limited by R
DS(on)
1ms
100us
DS(on)
DC
DC
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Figure 10.2 Power Dissipation vs. Temperature
TO-251/TO-252
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 2.0
2019
5
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