RS3A-RS3M
3.0AMPS. Surface Mount Fast Recovery Rectifiers
SMC/DO-214AB
Features
For surface mounted application
Glass passivated junction chip
Built-in strain relief, ideal for automated
placement
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Fast switching for high efficiency
High temperature soldering:
o
260 C /10 seconds at terminals
Mechanical Data
Cases: Molded plastic
Terminals: Pure tin plated, Lead free.
Polarity: Indicated by cathode band
Weight: 0.21 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1 @T
L
=75
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 3.0A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125 C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
o
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
R
θJL
T
J
RS
3A
50
35
50
RS
3B
100
70
100
RS
3D
200
140
200
RS
3G
400
280
400
3.0
100
1.3
10
250
RS
3J
600
420
600
RS
3K
800
560
800
RS
3M
1000
700
1000
Units
V
V
V
A
A
V
uA
uA
150
60
50
15
250
500
nS
pF
o
C/W
o
o
-55 to +150
C
Notes:
T
STG
-55 to +150
C
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B. with
0.6” x 0.6” ( 16mm x 16 mm ) Copper Pad Areas.
RS3A-RS3M
3.0AMPS. Surface Mount Fast Recovery Rectifiers
RATINGS AND CHARACTERISTIC CURVES (RS3A THRU RS3M)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
100
FIG.2- TYPICAL REVERSE CHARACTERISTICS
3.0
AVERAGE FORWARD CURRENT. (A)
2.5
RESISTIVE OR
INDUCTIVE LOAD
INSTANTANEOUS REVERSE CURRENT. ( A)
2.0
Tj=125
0
C
10
1.0
Tj=75
0
C
1
P.C.B. MOUNTED
0.6 X 0.6" ( 16 X 16mm )
COPPER PAD AREAS
0
0
50
150
100
o
LEAD TEMPERATURE. ( C)
200
Tj=25
0
C
0.1
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
PEAK FORWARD SURGE CURRENT. (A)
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
0.01
125
100
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLT
AGE. (%)
75
50
100
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
25
0
1
INSTANTANEOUS FORWARD CURRENT. (A)
10
NUMBER OF CYCLES AT 60Hz
100
0
Tj=125C
FIG.4- TYPICAL JUNCTION CAPACIT
ANCE
100
0
Tj=25C
f=1.0MHz
Vsig=50mVp-p
10
0
Tj=25C
JUNCTION CAPACITANCE.(pF)
1
Tj=-40
0
C
Pulse Width=300 s
1% Duty Cycle
10
1
10
REVERSE VOLTAGE. (V)
100
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLT
AGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
NXP MCU
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