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SR5100LH

产品描述直流反向耐压(Vr):100V 平均整流电流(Io):5A 正向压降(Vf):650mV @ 5A 5A
产品类别分立半导体    肖特基二极管   
文件大小756KB,共2页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
下载文档 详细参数 全文预览

SR5100LH概述

直流反向耐压(Vr):100V 平均整流电流(Io):5A 正向压降(Vf):650mV @ 5A 5A

SR5100LH规格参数

参数名称属性值
直流反向耐压(Vr)100V
平均整流电流(Io)5A
正向压降(Vf)650mV @ 5A

文档预览

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SR520LH-SR5100LH
Low V
F
Schottky Barrier Rectifiers
VOLTAGE RANGE: 20 --- 100 V
CURRENT: 5.0A
Features
Metal-semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
DO-201AD/
DO - 27
Mechanical Data
Case:JEDEC
DO-201AD/DO--27,molded
plastic
Polarity: Color band denotes cathode
Weight: 0.041ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SR520LH SR530LH SR540LH SR550LH R560LH SR580LH SR5100LH
UNITS
V
V
V
A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
(see fig.1)
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
30
21
30
40
28
40
50
35
50
5.0
60
42
60
80
56
80
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
V
F( 25
V
F(125
150.0
A
Maximum instantaneous forw ard voltage
@ 5.0A (Note 1)
Maximum reverse current
@T
A
=25
)
)
0.45
0.36
50.0
500
0.60
0.50
0.65
0.60
V
mA
pF
/W
at rated DC blocking voltage @T
A
=100
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
I
R
C
J
R
θ
JA
T
J
T
STG
2.5
25.0
400
25
-
55
---- + 125
-
55
---- +150
-
55
---- + 150
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300us pulse width,1% duty cy cle.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com

 
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