SMD Type
Schottky Diodes
1N5817W ~ 1N5819W
SOD-123FL
Features
Low power loss, high efficiency
High current capability
Low forward voltage drop
High Surge Capability
Top View
Diodes
1
2
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Absolute Maximum Ratings Ta = 25
Parameter
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Forward Voltage @ I
F
=1A
Forward Voltage @ I
F
=3.1A
Average Forward Rectified Current @ T
L
=90
Non-Repetitive Peak Forward Surge Current @8.3ms
Reverse Voltage Leakage Current
Typical Junction Capacitance
Junction Temperature
Storage Temperature range
Ta = 25
Ta = 100
C
J
T
J
T
stg
I
FAV
I
FSM
I
R
10
110
125
-55 to 125
pF
Symbol
V
RRM
V
RMS
V
DC
V
F
1N5817W
20
14
20
0.45
0.75
1N5818W
30
21
30
0.55
0.875
1
25
1
mA
1N5819W
40
28
40
0.6
0.9
A
V
Unit
Marking
NO.
Marking
1N5817W
1N5818W
1N5819W
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1
SMD Type
Schottky Diodes
1N5817W ~ 1N5819W
Typical Characterisitics
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current ( A)
1.2
10
4
Diodes
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
10
3
T
J
=125 C
10
2
T
J
=75 C
10
1
T
J
=25 C
10
0
0
20
40
60
80
100
Ambient Temperature ( C)
Percent of Rated Peak Reverse Voltage
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
1.0
500
Fig.4 Typical Junction Capacitance
Junction Capacitance ( pF)
0.5
0.6
0.7
200
100
50
5C
12
0.2
T
J
=
T
J
=2
5
C
0.5
20
10
0.1
1
10
100
0.1
0
0.1
0.2
0.3
0.4
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Peak Forward Surage Current (A)
30
25
20
15
10
05
00
1
C
/W
Transient Thermal Impedance
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
8.3 ms Single Half Sine Wave
(JEDEC Method)
Fig.6- Typical Transient Thermal Impedance
100
10
1
10
100
0.1
0.01
0.1
1
10
100
Number of Cycles at 50Hz
t, Pulse Duration
sec
2
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