SMD Type
Schottky Diodes
1N5817 ~ 1N5819
Features
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
1.524
0.762
0.203
0.051
5.668
4.925
2.126
1.397
2
Diodes
Transistors
DO-214AC(SMA)
4.597
3.988
Unit: mm
4.32
4.12
1
2.896 2.22
2.489 2.02
2.75
2.55
5.87
5.67
Recommended
Land Pattern
2.438
1.981
0.305
0.152
Absolute Maximum Ratings Ta = 25
Parameter
Peak Repetitive Peak Reverse Voltage
RMS Reverse Voltage
DC Blocking Voltage
Average Rectified Rectified Current
Peak Forward Surge Current @=8.3ms
Thermal Resistance Junction to Ambient (Note.1)
Thermal Resistance Junction to Lead
Voltage Rate of Change (rated V
R
)
Junction Temperature
Storage Temperature range
(Note.1)
Symbol
V
RRM
V
R(RMS)
V
R
I
FAV
I
FSM
R
R
JA
JL
1N5817
1N5818
1N5819
Unit
20
14
20
30
21
30
1
40
88
28
10000
-60 to 125
-65 to 150
40
28
40
A
V
/W
V/us
dv/dt
T
J
T
stg
Note.1: P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Electrical Characteristics Ta = 25
Parameter
Forward voltage (Note.1)
Reverse voltage leakage
current(Note.1)
Note.1: Pulse test: 300 s pulse width, 1 % duty cycle
Symbol
V
F
I
R
Test Conditions
I
F
= 1 A
Ta = 25
Ta = 100
Min
Typ
Max
0.5
0.2
6
Unit
V
mA
Marking
NO.
Marking
1N5817
1N5818
1N5819
SS12
SS13
SS14
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1
SMD Type
Schottky Diodes
1N5817 ~ 1N5819
Typical Characterisitics
1.0
Diodes
Transistors
50
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or
Inductive Load
At Rated T
L
8.3 ms Single Half Sine-Wave
40
P. C. B. Mounted on
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.5
30
20
10
0
50
70
90
110
130
150
170
0
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
100
1000
T
J
= 125 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
T
J
= 150 °C
1
T
J
= 25 °C
0.1
Pulse Width = 300 μs
1 % Duty Cycle
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Junction Capacitance (pF)
100
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
Instantaneous Reverse Current (mA)
10
T
J
= 125 °C
1
0.1
T
J
= 75 °C
0.01
T
J
= 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
2
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