S901 3
TRANSISTOR(NPN)
FEATURES
Complementary to S9012
Excellent h
FE
linearity
MARKING: J3
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
25
5
500
300
150
-55-150
Units
V
V
V
mA
mW
℃
℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
V
CE
=1V, I
C
=500mA
I
C
=500mA, I
B
= 50mA
I
C
=500mA, I
B
= 50mA
V
CE
=6V,
I
C
= 20mA
40
0.6
1.2
150
V
V
MHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
Test
conditions
MIN
40
25
5
0.1
0.1
120
400
TYP
MAX
UNIT
V
V
V
I
C
= 100
μ
A
,
I
E
=0
I
C
= 0.1mA
,
I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=40V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
=1V, I
C
= 50mA
μ
A
μ
A
f
T
f=
30MHz
CLASSIFICATION OF
Rank
Range
h
FE(1)
L
120-200
H
200-350
J
300-400
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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