MMBT2222A
TRANSISTOR(NPN)
SOT-23
FEATURES
Epitaxial planar die construction
Complementary PNP Type available(MMBT2907A)
1. BASE
2.EMITTER
3.COLLECTOR
MARKING: 1P
MAXIMUM RATINGS
(T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
Θ
JA
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Value
75
40
6
600
250
500
150
-55to+150
Units
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
*
Test
conditions
Min
75
40
6
Typ
Max
Unit
V
V
V
I
C
= 10μA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=30V,V
BE(off)
=3V
V
EB
= 3V, I
C
=0
V
CE
=10V, I
C
= 150mA
V
CE
=10V, I
C
= 0.1mA
V
CE
=10V, I
C
= 500mA
I
C
=500 mA, I
B
= 50mA
I
C
=150 mA, I
B
=15mA
I
C
=500 mA, I
B
= 50mA
I
C
=150 mA, I
B
=15mA
V
CE
=20V, I
C
= 20mA,
f=100MHz
V
CC
=30V, V
BE(off)
=-0.5V
I
C
=150mA , I
B1
= 15mA
V
CC
=30V, I
C
=150mA
I
B1
=-I
B2
=15mA
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1) *
0.01
0.01
0.1
100
40
42
1
0.3
2.0
1.2
300
10
25
225
60
300
μA
μA
μA
DC current gain
h
FE(2)
h
FE(3)
*
*
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
*pulse test: Pulse Width
≤300μs,
Duty Cycle≤ 2.0%.
V
CE(sat)
V
BE(sat)
f
T
t
d
t
r
t
S
t
f
V
V
MHz
nS
nS
nS
nS
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
详细参数
全文预览
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
