2N7002
60V N-Channel Enhancement Mode MOSFET
Feature
60V/0.2A,
R
DS(ON)
= 7.5
Ω
(MAX) @V
GS
= 10V. Id = 0.5A
R
DS(ON)
= 7.5
Ω
(MAX) @V
GS
= 5V . Id = 0.05A
SOT-23
Super High dense cell design for extremely low R
DS(ON) .
Reliable and Rugged.
SOT-23 for Surface Mount Package.
1. GATE
2. SOURCE
3. DRAIN
A
pplications
●
Power Management in Desktop Computer or DC/DC Converters .
T
A
=25℃ Unless Otherwise noted
Symbol
V
DS
V
GS
I
D
P
D
R
θ
JA
T
J
T
stg
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
P o w er Dissip atio n
Limit
60
±20
0.2
0.225
556
150
-50~+150
Units
V
V
A
W
℃
/W
℃
T herm al R esistance f ro m J unction to Am b ient
J unctio n T em p erature
Sto rage T em p erature
Electrical Characteristics
Parameter
Off Characteristics
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
BVDSS
IDSS
IGSSF
IGSSR
T
A
=25℃ Unless Otherwise noted
Symbol
Test Conditions
Min
Typ.
Max
Units
VGS=0V, ID=250µA
VDS=60V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
60
-
-
-
-
-
-
-
-
1
100
-100
V
µA
nA
nA
On Characteristics
Gate Threshold Voltage
Static Drain-source
On-Resistance
*
RDS(ON)
VGS =5V, ID =0.05A
-
7.5
Ω
VGS(th)
VGS= VDS, ID=250µA
VGS =10V, ID =0.5A
1
-
-
7.5
V
Ω
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=0.2A
2.5
V
Notes :
*Pulse Test : Pulse Width
≤300µs,
Duty Cycle
≤2%.
１
JinYu
semiconductor
www.htsemi.com
2N7002
Typical Characteristics
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
VGS=2.0V
VGS=3V
0.6
VGS=4，4.5，5，6，7，8½10V
0.5
ID,Drain Current(Amps)
ID,Drain Current(Amps)
0.4
0.3
Tj＝125℃
0.2
Tj＝25℃
0.1
0
5
4
0
1
2
3
4
5
VDS,Drain-to-Source Voltage(Volts)
VGS,Gate-to-Source Voltage(Volts)
Figure 1．Output Characteristics
Figure 2．Transfer Characteristics
72
BVDSS,Normalized Drain-Source Breakdown
Voltage(Volts)
Vth,Normalized Gate-Source Threshold
Voltage(V)
1.7
71
70
69
68
67
66
65
64
63
62
0
I
D=250uA
ID=250uA
1.6
1.5
1.4
1.3
1.2
1.1
50
100
150
200
0
50
100
150
200
Tj.Junction Temperature(℃)
Tj.Junction Temperature(℃)
Figure 3．Breakdown Voltage Variation
with Temperature
２
JinYu
Figure 4．Gate Threshold Variation
with Temperature
semiconductor
www.htsemi.com
2N7002
Typical Characteristics
9
RDS(on),Normalized On-Resistance(Ω)
10
9
RDS(on)-On Resistance(Ω)
8
7
6
5
4
3
2
1
0
0
50
100
150
200
Tj.Junction Temperature(℃)
8
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1
ID-Drain Current(A)
10V/0.5A
VGS=4.5V
4.5V/0.2A
VGS=10V
Figure 5．
On-Resistance Variation
with Temperature
Figure 6．
On-Resistance vs. Drain Current
12
10
10
RDS(on)-On Resistance(Ω)
IS-Source Current(A)
8
6
1
Tj＝150℃
ID=0.5A
4
Tj＝25℃
2
ID=0.2A
0.1
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
VGS,Gate-to-Source Voltage(Volts)
VSD-Source-to-Drain Voltage(V)
0
Figure 7．On-Resistance vs. Gate-to-Source
Voltage
３
JinYu
Figure 8．Source-Drain Diode Forward
Voltage
semiconductor
www.htsemi.com
详细参数
全文预览
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
