SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFET
5N04
V
(BR)DSS
40V
N-Channel MOSFET
R
DS(on)
MAX
35 mΩ@
10V
50
mΩ@4.5V
60
mΩ@2.5V
1. GATE
2. SOURCE
3. DRAIN
I
D
5A
SOT-23
3
1
2
FEATURE
TrenchFET Power MOSFET
Low R
DS(ON)
Typical ESD Protection
APPLICATION
Ideal for Load Swith and Battery
Protection Applications
MARKING
Equivalent Circuit
D
5N04
G
S
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
Symbol
V
DS
V
GS
I
D
I
DM
*
R
θJA
T
J
T
STG
T
L
Value
40
±20
5
20
417
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
1
A,Apr,2017
MOSFET ELECTRICAL CHARACTERISTICS
T
a
=25
℃
unless otherwise specified
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage(note
1)
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS
= 0V, I
D
=250µA
V
DS
=40V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=20V, I
D
=5A
Drain-source on-resistance
(note 1)
R
DS(on)
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=5A
Forward tranconductance
(note 1)
Diode forward voltage
(note 1)
DYNAMIC PARAMETERS
(note2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Notes :
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=15V,V
GS
=10V,I
D
=4A
0.5
1
V
DD
=15V,V
GS
=10V
R
L
=3.75Ω,R
GEN
=3Ω
2
3.5
22
3.5
10
ns
ns
ns
ns
nC
nC
nC
C
iss
C
oss
C
rss
V
DS
=15V,V
GS
=0V,f =1MHz
245
35
20
pF
pF
pF
g
FS
V
SD
V
DS
=5V, I
D
=4A
I
S
=1A, V
GS
= 0V
1.0
35
48
60
15
1
40
1
±100
2.5V
42
72
80
V
µA
nA
V
mΩ
mΩ
mΩ
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
2
A,Apr,2017
Typical Characteristics
Output Characteristics
40
14
Transfer Characteristics
V
DS
=3V
T
a
=25
℃
18
16
14
12
10
8
6
4
2
0
0.0
Pulsed
V
GS
=2.5V,3V,4V,5V
12
Pulsed
(A)
V
GS
=2V
(A)
10
T
a
=25
℃
T
a
=100
℃
I
D
I
D
DRAIN CURRENT
V
GS
=1.5V
2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
8
6
4
0
0.0
DRAIN CURRENT
0.5
1.0
1.5
2.0
2.5
3.0
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
—— I
D
50
250
R
DS(ON)
—— V
GS
Pulsed
I
D
=5A
(m
)
R
DS(ON)
150
T
a
=25
℃
Pulsed
45
200
R
DS(ON)
(m
)
V
GS
=2.5V
40
ON-RESISTANCE
V
GS
=4.5V
35
ON-RESISTANCE
100
T
a
=100
℃
30
V
GS
=10V
50
T
a
=25
℃
25
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0
1
2
3
4
5
6
7
8
9
10
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
—— V
SD
6
1.4
Threshold Voltage
Pulsed
1.2
I
S
(A)
V
TH
1
(V)
1.0
THRESHOLD VOLTAGE
SOURCE CURRENT
0.8
I
D
=250uA
T
a
=100
℃
0.1
T
a
=25
℃
0.6
0.4
0.2
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
j
(
℃
)
3
A,Apr,2017
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
4
A,Apr,2017
嵌入式系统
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