US1AL THRU US1ML
SOD-1 23FL Plastic-Encapsulate Diodes
High Efficient Rectifier
HD FL 46
Features
●I
o
1A
SOD-1 23FL
50V-1000V
●VRRM
●High
surge current capability
●
Glass passivated chip
●
Polarity: Color band denotes cathode
Applications
●
Rectifier
Marking
●
US1AL-US1DL : USL
●
US1GL : USM
●
US1JL-US1ML : USH
US1
Item
Symbol Unit
V
RRM
V
RMS
Conditions
AL
BL
100
70
DL
200
140
FL
300
210
GL
400
JL
600
KL
ML
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
V
50
35
800 1000
560
700
280 420
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I
F(AV)
I
FSM
T
J
T
STG
A
90
60Hz Half-sine wave,1 cycle,
Ta=25℃
1.0
30
-55 ~ +150
-55 ~ +150
A
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Item
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery time
Thermal
Resistance(Typical)
Symbol
V
FM
I
RRM1
I
RRM2
t
rr
R
θ
J-A
Unit
V
μA
ns
Test Condition
I
FM
=1.0A
V
RM
=V
RRM
Ta=25℃
US1
AL
BL DL
FL
GL
1A 1B 1D 1F 1G
1.0
1.3
5
50
50
70
1)
25
1)
75
JL
1J
KL
ML
1K 1M
1.7
Ta=125℃
I
F
=0.5A I
R
=1A
I
RR
=0.25A
Between junction and ambient
℃
/W
Between junction and terminal
R
θ
J-L
Notes:
(1)
Thermal resistance between junction and ambient and between junction and lead mounted on P.C.B with 3mm*3mm
copper pad areas.
H
igh Diode Semiconductor
1
Typical Characteristics
IO(A)
IFSM(A)
1.0
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
35
0.8
30
8.3ms Single Half Sine Wave
JEDEC Method
25
0.6
20
0.4
15
0.2
10
0
0
Single Phase
Half Wave 60Hz
Resistive Load
50
100
150
Ta(
℃
)
5
0
1
2
10
20
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
IF(A)
TJ=25
℃
Pulse width=300us
1% Duty Cycle
10
US1AL-DL
FIG.4
:
TYPICAL REVERSE CHARACTERISTICS
IR(uA)
1000
100
100
Tj=100
℃
1.0
US1GL
10
Tj=25
℃
0.1
US1JL-ML
1.0
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF(V)
0.1
0
20
40
60
80
100
Voltage(%)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
IF
t
rr
V
R
I
F
R
L
0
I
RR
t
I
R
H
igh Diode Semiconductor
2