BDFN1C031V
ESD Protection Diode
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Features
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70Watts peak pulse power (tp = 8/20μs)
Tiny DFN0603 package
Bidirectional configurations
Solid-state silicon-avalanche technology
Low clamping voltage
Low leakage current
IEC 61000-4-2 ±30kV contact ±30kV air
IEC 61000-4-4 (EFT) 40A(5/50ns)
IEC 61000-4-5 (Lightning) 9A (8/20μs)
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Applications
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Mechanical Data
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Cell Phone Handsets and Accessories
Microprocessor based equipment
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
DFN0603package
Molding compound flammability rating: UL 94V-0
Packaging: Tape and Reel
RoHS/WEEE Compliant
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Schematic & PIN Configuration
Revision 2018
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BDFN1C031V
»
Absolute Maximum Rating
Rating
Peak Pulse Power ( t
p
=8/20μs )
Peak Pulse Current ( t
p
=8/20μs )(note1)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2 (Contact)
Lead SolderingTemperature
JunctionTemperature
StorageTemperature
Symbol
P
PP
I
pp
V
ESD
T
L
T
J
T
stg
Value
70
9
30
30
260(10seconds)
-55 to + 125
-55 to + 125
Units
Watts
A
kV
℃
℃
℃
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Electrical Characteristics
Parameter
Reverse Stand-OffVoltage
Reverse BreakdownVoltage
Reverse LeakageCurrent
Peak Pulse Current
Clamping Voltage
1)
Clamping Voltage
2)
Clamping Voltage
2)
Symbol
V
RWM
V
BR
I
R
I
PP
V
CL
Conditions
Min
Typical
Max
3.3
Units
V
V
I
T
=1mA
V
RWM
=3.3V,T=25℃
tp =8/20μs
I
PP
=16A,t
p
=100ns
I
PP
=1A,t
p
=8/20μs
3.4
4.0
0.2
9
8
5
8
12
13
17
μA
A
V
V
V
pF
V
C
I
PP
=9A,t
p
=8/20μs
C
j
V
R
= 0V, f =1MHz
JunctionCapacitance
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Electrical Parameters (TA = 25°C unless otherwisenoted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @
I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @
V
RWM
Breakdown Voltage @
I
T
Test Current
I
V
Note:.
8/20μs
pulsewaveform.
Revision 2018
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BDFN1C031V
»
Typical
Characteristics
Figure 1: Peak Pulse Power vs. Pulse Time
P
pp
–
Peak Pulse Power - Ppp(KW)
10
Figure 2: Power Derating Curve
110
100
Percent of Rated Power for I
pp
1,000
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
1
70w 8/20µs waveform
0.1
0.01
0.1
1
10
100
t
d
–
Pulse Duration - µs
Ambient Temperature - T
A
(℃)
Figure3:
Pulse Waveform
110
100
90
80
Figure 4: Clamping Voltage vs.Ipp
Waveform
Paramters
tr=8µs
td=20µs
9
8
Clamping Voltage–V
C
(V)
7
6
5
4
3
2
1
I
pp
70
60
50
40
30
20
10
0
0
5
e
-1
Percent
td=Ipp/2
Test
Waveform
Paramters
tr=8µs
td=20µs
0
2
4
6
8
10
12
10
Time (µs)
15
20
25
30
0
Peak Pulse Current–I
PP
(A)
Revision 2018
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BDFN1C031V
»
Outline
Drawing – DFN0603
E
b
b
Sy mbo l
L
D
h
h
e
Dimensions in millimeters
Min
0.28
0.00
0.05
0.55
0.25
0.34
0.14
0.20
0
No m
0.30
0.02
0.10
0.60
0.30
0.35
0.19
0.25
0.05
Max
0.32
0.05
0.15
0.65
0.35
0.37
0.24
0.30
0.10
A
A1
C
D
E
e
b
TOP VIEW
BOTTOM VIEW
A
C
A1
SIDE VIEW
L
h
»
Marking
B
Pin 1
Pin 2
»
Ordering information
Order code
BDFN1C031V
Package
DFN0603
Base qty
10k
Delivery mode
Tape and reel
Revision 2018
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微控制器 MCU
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