BDX53B - BDX53C
BDX54B - BDX54C
Complementary power Darlington transistors
Features
■
■
■
Good h
FE
linearity
High f
T
frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
3
1
2
Application
■
■
Audio amplifiers
Linear and switching industrial equipment
TO-220
Description
The devices are manufactured in planar base
island technology with monolithic Darlington
configuration.
Figure 1.
Internal schematic diagram
R1 typ.= 10 kΩ
R2 typ.= 150
Ω
Table 1.
Device summary
Order code
BDX53B
BDX53C
BDX54B
BDX54C
Marking
BDX53B
BDX53C
TO-220
BDX54B
BDX54C
Tube
Package
Packaging
October 2007
Rev 4
1/7
www.st.com
7
Electrical ratings
BDX53B - BDX53C - BDX54B - BDX54C
1
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
TOT
T
stg
T
J
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (repetitive)
Base current
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
BDX53B
BDX54B
80
80
5
8
12
0.2
60
-65 to 150
150
BDX53C
BDX54C
100
100
V
V
V
A
A
mA
W
°C
°C
Unit
Note:
For PNP types voltage and current values are negative.
2/7
BDX53B - BDX53C - BDX54B - BDX54C
Electrical characteristics
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
CEO(sus)(1)
Electrical characteristics
Parameter
Collector-emitter
sustaining voltage (I
B
= 0)
Test conditions
I
C
= 100 mA
for BDX53B - BDX54B
for BDX53C - BDX54C
V
CB
= 80 V
Min.
Typ.
Max.
Unit
80
100
0.2
V
V
mA
I
CBO
Collector cut-off current
(I
E
= 0)
for BDX53B - BDX54B
V
CB
= 100 V
for BDX53C - BDX54C
V
CE
= 40 V
0.2
mA
I
CEO
Collector cut-off current
(I
B
= 0)
for BDX53B - BDX54B
V
CE
= 50 V
for BDX53C - BDX54C
0.5
mA
0.5
mA
I
EBO
V
CE(sat)(1)
V
BE(sat)(1)
h
FE(1)
V
F(1)
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V
I
B
= 12 mA
I
B
= 12 mA
V
CE
= 3 V
750
1.8
2.5
2
2
2.5
mA
V
V
Collector-emitter saturation
I
C
= 3 A;
voltage
Base-emitter saturation
voltage
DC current gain
Diode forward voltage
I
C
= 3 A;
I
C
= 3 A;
I
F
= 3 A;
I
F
= 8 A;
2.5
V
V
1. Pulsed: pulse duration = 300
µs,
duty cycle 1.5%
Note:
For PNP types voltage and current values are negative.
3/7
Package mechanical data
BDX53B - BDX53C - BDX54B - BDX54C
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
4/7
BDX53B - BDX53C - BDX54B - BDX54C
Package mechanical data
TO-220 mechanical data
mm
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
4.40
0.61
1.14
0.49
15.25
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
16.40
28.90
3.75
2.65
3.85
2.95
0.147
0.104
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
Typ
Max
4.60
0.88
1.70
0.70
15.75
Min
0.173
0.024
0.044
0.019
0.6
inch
Typ
Max
0.181
0.034
0.066
0.027
0.62
0.050
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
0.151
0.116
5/7
模拟电子
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