BTA20
20 A Snubberless™ Triacs
Datasheet
-
production data
A2
Features
•
I
T(RMS)
= 20 A
•
V
DRM
, V
RRM
= 600 and 700 V
G
A1
•
I
GT (Q1)
(max) = 35 and 50 mA
Description
The BTA20 Triacs use high performance glass
passivated chip technology. The Snubberless
concept offers suppression of the RC network and
is suitable for applications such as phase control
and static switching on inductive or resistive load.
Thanks to their clip assembly technique, the
BTA20 Triacs provide a superior performance in
surge current handling capabilities.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at
2500 V rms) complying with UL standards (File
ref.: E81734).
A1
A2
G
TO-220AB Insulated
TM: Snubberless is a trademark of STMicroelectronics.
September 2014
This is information on a product in full production.
DocID2932 Rev 4
1/8
www.st.com
Characteristics
BTA20
1
Characteristics
Table 1. Absolute maximum ratings
Symbol
I
T(RMS)
I
TSM
I
²
t
Parameter
On-state rms current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25°C)
I
²
t Value for fusing
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
T
c
= 70 °C
t = 10 ms
t = 8.3 ms
Value
20
210
A
200
200
50
A/µs
100
V
DRM
/V
RRM
100
4
16
T
j
= 125 °C
1
- 40 to + 150
°C
Operating junction temperature range
- 40 to + 125
V
A
V
W
A
²
s
Unit
A
dI/dt
Repetitive
Critical rate of rise of on-state current F = 50 Hz
T
j
= 125 °C
I
G
= 2 x I
GT
, t
r
≤
100 ns
Non repetitive
Non repetitive peak off-state voltage
Peak gate current
Peak positive gate voltage
Average gate power dissipation
Storage junction temperature range
t
p
= 10 ms
t
p
= 20 µs
t
p
= 20 µs
T
j
= 25 °C
T
j
= 125 °C
V
DSM
,
V
RSM
I
GM
V
GM
P
G(AV)
T
stg
T
j
Table 2. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
BTA20
Symbol
Test conditions
Quadrant
BW
I
GT (1)
V
GT
V
GD
I
H (2)
V
D
= V
DRM,
R
L
= 3.3 kΩ, T
j
= 125 °C
I
T
= 500 mA, gate open
I - III
Typ.
I
L
I
G
= 1.2 I
GT
II
I - II - III
dV/dt
(2)
V
D
= 67% V
DRM,
gate open
T
j
= 125 °C
Max.
Typ.
Min.
Typ.
T
j
= 125 °C
Min.
90
-
750
500
36
18
-
80
500
V/µs
250
22
V/µs
11
mA
Min.
V
D
= 12 V, R
L
= 33
Ω
ALL
Max.
ALL
ALL
Max.
Min.
Max.
75
50
50
1.5
0.2
50
-
35
V
V
mA
2
CW
1
mA
Unit
(dV/dt)c
(2)
(dI/dt)c = 20 A/ms
1. Minimum I
GT
is guaranteed at 5% of I
GT
max.
2. For both polarities of A2 referenced to A1.
2/8
DocID2932 Rev 4
BTA20
Table 3. Static characteristics
Symbol
V
TM (1)
I
DRM
I
RRM
I
TM
= 28 A, t
p
= 380 µs
V
DRM
= V
RRM
Parameter
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
Max.
Max.
Characteristics
Value
1.70
10
3
Unit
V
µA
mA
1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistances
Symbol
R
th(j-c)
R
th(j-c)
R
th(j-a)
Junction to case for AC
Junction to case for DC
Junction to ambient
Parameter
Value
2.1
2.8
60
°C/W
Unit
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
Figure 2. Correlation between maximum rms
power dissipation and maximum allowable
temperatures
P(W)
30
R
th
= 0°C/W
P(W)
30
25
20
T
case
(°C)
65
75
R
th
= 0.5°C/W
25
α
= 180°
α
= 120°
20
15
10
180°
R
th
= 1.5°C/W
85
95
R
th
= 1°C/W
15
10
5
0
0
5
α
= 90°
α
= 60°
α
= 30°
105
115
125
α
α
5
0
I
T(RMS)
(A)
10
15
20
(Tamb and Tcase) for different thermal
resistances heatsink + contact
T
amb
(°C)
0
20
40
60
80
100
120
Figure 3. On-state rms current versus case
temperature (full cycle)
I
T(RMS)
(A)
25
Figure 4. Relative variation of thermal
impedance versus pulse duration
K=[Z
th
/R
th
]
1
α
= 180°
20
Z
th(j-c)
15
10
Z
th(j-a)
0.1
5
T
C
(°C)
0
0
10
20
30
40
50
60
70
80
90
100
110 120 130
0.01
1.E-3
t
p
(s)
1.E-2
1.E-1
1.E+0
1.E+1
1.E+2
5.E+2
DocID2932 Rev 4
3/8
8
Characteristics
BTA20
Figure 5. On-state characteristics
(maximum values)
I
TM
(A)
1000
T
j
max.
V
t0
= 1.04V
R
d
= 20 m
Ω
Figure 6. Non repetitive surge peak on-state
current versus number of cycles
I
TSM
(A)
1000
t=20ms
100
One cycle
T
j
= T
j
max.
Non repetitive
T
j
initial=25°C
10
T
j
= 25°C.
1
1
2
V
TM
(V)
3
4
5
Number of cycles
100
1
10
100
1000
Figure 7. Non repetitive surge peak on-state
current for a sinusoidal pulse and
corresponding value of I
2
t
I
TSM
(A), I
2
t (A
2
s)
1000
Figure 8. Relative variation of gate trigger
current and holding current versus junction
temperature
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
pulse width t
≤
10 ms
T
j
initial=25°C
2.0
I
TSM
1.5
I
GT
1.0
I
2
t
I
H
& I
L
0.5
t
p
(ms)
100
T
j
(°C)
1.00
10.00
0.0
-40 -30 -20 -10
0
10 20 30 40
50 60 70
80 90 100 110 120 130
0.01
0.10
4/8
DocID2932 Rev 4
BTA20
Package information
2
Package information
•
•
Epoxy meets UL94, V0
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Figure 9. TO-220AB package dimensions (definitions)
B
b2
ØI
L
C
F
Gate note1
A
I4
l3
a1
c2
l2
a2
M
b1
e
c1
DocID2932 Rev 4
5/8
8
DIY/开源硬件专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
