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1.5KE350A

产品描述极性:Unidirectional 峰值脉冲电流(10/1000us):4A 箝位电压:482V 击穿电压(最小值):332V 反向关断电压(典型值):300V 1500W 350V
产品类别分立半导体    二极管   
文件大小122KB,共10页
制造商ST(意法半导体)
官网地址http://www.st.com/
标准
下载文档 详细参数 全文预览

1.5KE350A概述

极性:Unidirectional 峰值脉冲电流(10/1000us):4A 箝位电压:482V 击穿电压(最小值):332V 反向关断电压(典型值):300V 1500W 350V

1.5KE350A规格参数

参数名称属性值
Brand NameSTMicroelectronics
是否Rohs认证符合
零件包装代码DO-201
包装说明O-PALF-W2
针数2
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time9 weeks
Samacsys Confidence3
Samacsys StatusReleased
Samacsys PartID179051
Samacsys Pin Count2
Samacsys Part CategoryDiode
Samacsys Package CategoryDiodes, Axial Diameter Horizontal Mounting
Samacsys Footprint NameDO-201
Samacsys Released Date2016-03-17 18:36:42
Is SamacsysN
其他特性UL RECOGNIZED
最大击穿电压368 V
最小击穿电压332 V
击穿电压标称值350 V
外壳连接ISOLATED
最大钳位电压618 V
配置SINGLE
最小二极管电容430 pF
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-201
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
最高工作温度175 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散5 W
认证状态Not Qualified
最大重复峰值反向电压299 V
最大反向电流5 µA
表面贴装NO
技术AVALANCHE
端子面层Matte Tin (Sn) - annealed
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

1.5KE350A文档预览

1.5KE
Transil™
Datasheet
production data
Features
Peak pulse power: 1500 W (10/1000 µs)
Breakdown voltage range:
From 6.8 V to 440 V
Uni and bidirectional types
Low clamping factor
Fast response time
UL 497B file number: QVGQ2.E136224
DO-201
K
A
Description
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly
suited to protect voltage sensitive devices such as
MOS Technology and low voltage supplied IC’s.
TM:Transil
is a trademarks of STMicroelectronics.
March 2012
This is information on a product in full production.
Doc ID 2913 Rev 4
1/10
www.st.com
10
Characteristics
1.5KE
1
Table 1.
Symbol
P
PP
P
I
FSM
T
stg
T
j
T
L
Characteristics
Absolute maximum ratings (T
amb
= 25
°C
)
Parameter
Peak pulse power dissipation
(1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current for unidirectional
types
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10s at 5mm from case.
T
j initial
= T
amb
T
amb
= 75 °C
t
p
= 10 ms
T
j initial
= T
amb
Value
1500
5
200
-65 to + 175
175
230
Unit
W
W
A
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th(j-l)
R
th(j-a)
Thermal parameter
Parameter
Junction to leads
Junction to ambient on printed circuit. L
lead
= 10 mm
Value
20
°C/W
75
Unit
Figure 1.
Electrical characteristics - definitions
I
I
F
Unidirectional
I
I
PP
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current @ V
RM
I
PP
Peak pulse current
I
R
Breakdown current
α
T Voltage temperature
coefficient
V
F
Forward voltage drop
R
D
Dynamic impedance
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
2/10
Doc ID 2913 Rev 4
1.5KE
Table 3.
Electrical characteristics - parameter values (T
amb
= 25 °C)
I
RM
@ V
RM
Order code
max.
µA
1.5KE6V8A/CA
1.5KE7V5A/CA
1.5KE10A/CA
1.5KE12A/CA
1.5KE15A/CA
1.5KE18A/CA
1.5KE22A/CA
1.5KE24A/CA
1.5KE27A/CA
1.5KE30A/CA
1.5KE33A/CA
1.5KE36A/CA
1.5KE39A/CA
1.5KE47A/CA
1.5KE56A/CA
1.5KE62A/CA
1.5KE68A/CA
1.5KE82A/CA
1.5KE100A/CA
1.5KE120A/CA
1.5KE150A/CA
1.5KE180A/CA
1.5KE200A/CA
1.5KE220A/CA
1.5KE250A/CA
1.5KE300A/CA
1.5KE350A/CA
1.5KE400A/CA
1.5KE440A/CA
1000
500
10
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
5.8
6.4
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
40.2
47.8
53.0
58.1
70.1
85.5
102
128
154
171
188
213
256
299
342
376
V
BR
@
I
R(1)
min.
V
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
49.4
58.8
65.1
71.4
86.1
105
126
158
189
210
231
263
315
368
420
462
mA
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
CL
@ I
PP
10/1000 µs
max.
V
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
64.8
77
85
92
113
137
165
207
246
274
328
344
414
482
548
603
A
143
132
100
90
71
59.5
49
45
40
36
33
30
28
23.2
19.5
17.7
16.3
13.3
11
9.1
7.2
6.1
5.5
4.6
5.0
5.0
4.0
4.0
3.5
V
CL
@ I
PP
8/20 µs
max.
V
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
84
100
111
121
146
178
212
265
317
353
388
442
529
618
706
776
A
746
690
538
461
368
308
254
234
207
187
169
156
143
119
100
90
83
69
56
47
38
31.5
28
26
23
19
16
14
13
Characteristics
αT
(2)
max.
10-4/ °C
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.1
10.3
10.4
10.4
10.5
10.6
10.7
10.8
10.8
10.8
10.8
11
11
11
11
11
C
(3)
typ.
pF
9500
8500
7000
6000
5000
4300
3700
3500
3200
2900
2700
2500
2400
2050
1800
1700
1550
1350
1150
1000
850
725
675
625
560
500
430
390
360
max. nom.
V
6.45
7.13
9.5
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
44.7
53.2
58.9
64.6
77.9
95.0
114
143
171
190
209
237
285
332
380
418
V
6.8
7.5
10
12
15
18
22
24
27
30
33
36
39
47
56
62
68
82
100
120
150
180
200
220
250
300
350
400
440
1. Pulse test: t
p
< 50 ms (see
Figure 2)
2.
ΔV
BR
=
αT ×
(T
amb
- 25)
×
V
BR
(25 °C)
3. V
R
= 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2.
Doc ID 2913 Rev 4
3/10
Characteristics
Figure 2.
Pulse definition for electrical characteristics
% Ipp
100
50
0
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
1.5KE
tr
tp
Figure 3.
Peak pulse power dissipation
versus initial junction temperature
(printed circuit board)
Figure 4.
Peak pulse power versus
exponential pulse duration
100%
80%
Peak power
(on printed circuit)
60%
40%
20%
Tj initial
0%
0
20
40
60
80
100 120 140
160
180 200
Figure 5.
Clamping voltage versus peak
pulse current
Figure 6.
Capacitance versus reverse applied
voltage for unidirectional types
(typical values)
1. 5K E
1.5KE
1000
vcl (v)
1.5KE440A
100
% Ipp
Tj initial = 25°C
C (pF)
10000
1.5KE220A
7V 5
15
68
1 00
50
0
Tj = 25 °C
F = 1 MHz
1.5KE100A
tr
tp
tr <10µs
100
1.5KE56A
1. 5K E
1000
1. 5 K E
1.5KE22A
1.5KE12A
10
100
1.5KE6V8A
tp = 20 µs
tp = 1 ms
tp = 10 ms
1
0.1
1
10
100
Ipp (A)
1000
10
1
10
100
500
The curves of
Figure 5
are specified for a junction temperature of 25 °C before surge. The
given results may be extrapolated for other junction temperatures by using the following
formula:
ΔV
BR
=
αT ×
(Tamb - 25)
×
V
BR
(25 °C).
For intermediate voltages, extrapolate the given results.
4/10
Doc ID 2913 Rev 4
1.5KE
Characteristics
Figure 7.
Capacitance versus reverse applied Figure 8.
voltage for bidirectional types
(typical values)
Peak forward voltage drop versus
peak forward current (typical values
for unidirectional types)
10000
IFM (A)
500
Multiply by 2 for units with V
BR
> 220 V
F
100
1000
100
10
VFM (V)
10
1
10
100
500
1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Figure 9.
Transient thermal impedance
junction-ambient versus pulse
duration
Figure 10. Relative variation of leakage
current versus junction
temperature
100
Zth (j-a) (°C/W)
Epoxy printed circuit board, FR4
copper thickness = 35 µm
10
1
tp (s)
0.1
0.01
0.1
1
10
100
1000
Doc ID 2913 Rev 4
5/10
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