MN638SVL-RPT0TL
Silicon NPN Darlington Power Transistor
DESCRIPTION
·Low
Collector Saturation Voltage
·High
DC Current Gain
·High
Reliability
APPLICATIONS
·Audio
power amplifiers
·Relay
& solenoid drivers
·Motor
controls
·General
purpose power amplifiers
·Including
zener diode
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO(SUS)
V
EBO
V
Z
I
C
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Zener Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
450
350
6
350
10
3.0
150
150
-40~150
UNIT
V
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
Ordering Information
Product
MN638SVL-RPT0TL
V01
Package
TO-263
1
Packaging
Tube
www.sourcechips.com
MN638SVL-RPT0TL
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
Z
V
(BR)EBO
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
EBO
h
FE
PARAMETER
Zener Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
I
Z
= 0.1mA
I
E
= 5mA; I
C
= 0
I
C
= 4A; I
B
= 15mA
I
C
= 4A; I
B
= 15mA
V
CB
= 350V; I
E
= 0
V
EB
= 6V; I
C
=0
I
C
= 4A; V
CE
= 5V
500
MIN
350
6
1.5
2.0
0.1
5
4000
TYP.
MAX
450
UNIT
V
V
V
V
mA
mA
V01
2
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