MJW0302AT4TL
DESCRIPTION
·High
DC current amplifier rate
h
FE:
50-200@V
CE
= 5V,I
C
= 1A
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High
power audio, disk head positioners and other linear
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
CEX
V
EBO
I
C
I
CM
I
B
P
T
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
V
EB
= 5V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
UNIT
V
V
V
V
A
A
A
W
℃
℃
-250
-250
-250
-5
-15
-30
-1.5
150
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.63
UNIT
℃/W
Ordering Information
Product
MJW0302AT4TL
Package
TO-3PN
Packaging
Tube
V01
1
www.sourcechips.com
MJW0302AT4TL
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(
sat
)
V
BE(on)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
h
FE-4
h
FE-5
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
CONDITIONS
I
C
=- 100mA; I
B
= 0
MIN
TYP.
MAX
UNIT
V
-0.6
-1.5
-50
-50
-5
V
V
mA
mA
mA
-250
I
C
= -10A; I
B
=-
1A
I
C
= -8A;V
CE
= -5V
V
CB
=- 250V
V
CE
=- 250V
V
EB
=- 5V
I
C
= -0.1A; V
CE
=-5V
I
C
= -1A; V
CE
= -5V
I
C
= -3A; V
CE
= -5V
I
C
=- 5A; V
CE
= -5V
I
C
=- 8A; V
CE
= -5V
75
75
75
45
15
150
150
150
V01
2
www.sourcechips.com
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