D
N03D
N
30V /55A Single N Power MOSFET
30V /55A Single N Power MOSFET
SM6536D1RL
55N03D
30
7.0
11.0
55
V
mΩ
mΩ
A
General Description
30V /55A Single N Power MOSFET
Very low on-resistance RDS(on) @ VGS=4.5 V
Pb-free lead plating; RoHS compliant
R
DS(on),TYP@VGS=10V
R
DS(on),TYP@VGS=4.5
I
D
V
DS
Part ID
SM6536D1RL
Package Type
DFN5x6
Marking
6536
Tape and reel
infomation
3000
100% UIS Tested
100% Rg Tested
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
A
Pulsed Drain Current
Avalanche Current
G
G
B
Symbol
V
DS
V
GS
Maximum
30
20
55.0
35*
88.0
17.6
40.5
35.5
14*
-55 to 150
Units
V
±V
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
A
Repetitive avalanche energy L=0.1mH
Power Dissipation
A
mJ
W
°C
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
Symbol
t ≤ 10s
Steady State
Steady State
R
θJA
R
θJL
Typ
25
50
15
Max
37
60
24
Units
°C/W
°C/W
°C/W
V01
1
www.sourcechips.com
STATIC PARAMETERS
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
Parameter
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-
Resistance
Forward Transconductance
Diode Forward Voltage
30V /55A Single N Power MOSFET
Conditions
I
D
= -250uA, V
GS
= 0V
VDS=30V, VGS=0V
V
DS
= 0V, V
GS
= ±20V
V
DS
= V
GS
I
D
= 250µA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=183V
Min
Typ
SM6536D1RL
Max
Units
30
1
5
±100
V
uA
nA
1.3
1.9
7.0
11.0
68
0.72
2.5
10.0
14.3
1
55
V
mΩ
S
V
A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Symbol
C
iss
C
oss
C
rss
R
g
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=0V, VDS=15V, f=1MHz
Conditions
Min
Typ
Max
Units
pF
pF
pF
1210
210
100
1476
258
119
1.75
Ω
SWITCHING PARAMETERS
Symbol
Q
g
(10V)
Q
g
4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Parameter
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Conditions
Min
Typ
Max
Units
9
VGS=10V, VDS=15V, ID=20A
4.5
2.45
3.5
4.5
3.6
12.6
4.05
9
13
nC
VGS=10V, VDS=15V,RL=0.75Ω,
RGEN=3Ω
ns
I
F
=-8A, dI/dt=500A/µs
I
F
=18A, dI/dt=500A/µs
ns
nC
V01
2
www.sourcechips.com
30V /55A Single N Power MOSFET
SM6536D1RL
V01
3
www.sourcechips.com
30V /55A Single N Power MOSFET
SM6536D1RL
V01
4
www.sourcechips.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
