SM2314
N-Channel High Density Trench MOSFET (20V, 5.4A)
Pb
PRODUCT SUMMARY
V
DSS
20V
I
D
5.4A
R
DS(on)
(m-ohm) Max
30 @ V = 4.0V, I =5.4A
=5.4A
=4.3A
40 @ V = 2.5V, I =4.3A
◆
Features
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM.
RoHS Compliant.
5
SM2314 Pin Assignment & Symbol
◆
Ordering Information
Ordering Number
Lead Free
Halogen Free
SM2314SRL
SM2314LRL
SM2314SRG
SM2314LRG
Pin Assignment
1
G
G
2
S
S
3
D
D
Package
SOT-23
SOT-23-3L
SM2314-LR-G
(1)Package Type
(2)Packing Type
(3)Lead Free
V01
D
D
D
D
D
D
D
D
SG
SG
SG
SG
SG
SG
SG
SG
、
、4
、3
、2
、1
Packing
Tape Reel
Tape Reel
(1) S：SOT-23；L：SOT-23-3L
(2) R：Tape Reel
(3) G：Halogen Free；L：Lead Free
1
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SM2314
◆
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
I
S
T
j
, T
stg
R
θ
JA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
a
o
Parameter
Ratings
20
Units
V
V
A
A
W
A
°C
°C/W
±12
6
20
1.25
1.4
-55 to +150
100
Total Power Dissipation @T
A
=25 C
Maximum Diode Forward Current
Operating Junction and Storage Temperature Range
b
Thermal Resistance Junction to Ambient (PCB mounted)
a: Repetitive Rating: Pulse width limited by the maximum junction temperation.
b: 1-in2 2oz Cu PCB board.
◆
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Characteristi
Test Conditions
Min.
Typ.
Max.
Unit
•
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
=0V, I
D
=250uA
V
DS
=20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
V
DS
=V
GS
, I
D
=250uA
V
GS
=4V, I
D
=5.4A
Drain-Source On-State Resistance
Forward Transconductance
d
20
-
-
-
-
-
-
1
±100
V
uA
nA
•
On Characteristics
c
Gate Threshold Voltage
0.6
-
-
-
-
V
DS
=8V, V
GS
=0V, f=1MHz
-
-
-
0.78
23
30
15.4
1.2
30
40
-
-
-
-
-
-
-
nC
pF
mΩ
S
V
V
GS
=2.5V, I
D
=4.3A
V
DS
=10V, I
D
=5A
•
Dynamic Characteristics
Input Capacitance
Output Capacitance
522.3
98.48
74.69
6.24
1.64
1.34
10.4
4.4
27.36
4.16
Reverse Transfer Capacitance
Total Gate Charge
•
Switching Characteristics
d
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=10 R
G
=6
Ω
,
I
D
=1A V
GEN
=4.5V,
-
-
-
-
-
-
•
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=1.7A
-
c : Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
d: Guaranteed by design, not subject to production testing.
V01
2
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，
，
V
DS
=10V
I
D
=6.0
V
GS
=4.5V
20.8
8.8
54.72
8.32
-
V
nS
0.74
模拟与混合信号
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