General Description
N-Channel，5V Logic Level Control
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Pb-free lead plating; RoHS compliant
V
DS
I
D
SM95N03A
4.2
5.9
95
30
mΩ
mΩ
A
V
R
DS(on),TYP@VGS=10V
R
DS(on),TYP@VGS=4.5
SM95N03A
Part ID
Package Type
DFN5x6
95N03
Marking
Tape and reel
infomation
3000PCS/Reel
100% UIS Tested
100% Rg Tested
Maximum
ratings, at TC =25°C, unless otherwise specified
V
(RB)DSS
I
D
I
S
Symbol
Drain-Source breakdown voltage
Parameter
Rating
30
95
Unit
A
V
Diode continuous forward current
Continuous drain current@VGS=10V
Pulse drain current tested ①
Maximum power dissipation
Gate-Source voltage
I
DM
E
AS
P
D
V
GS
CT =100°
CT =25°
CT =25°
95
Avalanche energy, single pulsed ②
CT =25°
450
300
105
70
A
A
mJ
W
V
A
T
STG
T
J
Storage and operating temperaturerange
-55 to 150
±20
°C
Thermal Characteristics
Symbol
R JA
R JC
Thermal Resistance-Junction to Case
Parameter
Typical
1.1
48
Thermal Resistance Junction-Ambient
°C/W
°C/W
Unit
V01
1
www.sourcechips.com
Thermal Characteristics
Symbol
SM95N03A
Condition
Min
30
--
--
--
1.0
--
--
--
Typ
-
--
--
--
1.8
4.2
4.5
1690
210
155
11
36
Max
-
1
100
±100
2.5
5
7.5
--
Unit
V
μA
μA
nA
V
mΩ
mΩ
pF
VGS=0V ID=250μA
Static Electrical Characteristics @ T j= 25°C (unless otherwise stated)
Parameter
V
(BR)DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain
Current(Tc=25℃)
Zero Gate Voltage Drain
Current(Tc=125℃)
VDS=40V,VGS=0V
VDS=40V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=30A
VGS=4.5V, ID=20A
V
GS(TH)
R
DS(ON)
C
iss
Q
g
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
③
Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated)
C
DSS
C
RSS
Q
gs
Q
ds
t
r
t
f
T
d(on)
Input Capacitance
Output Capacitance
Total Gate Charge
Reverse Transfer Capacitance
Gate-Source Charge
Gate-Drain Charge
VDS=30V,VGS=0V,
f=1MHz
--
--
--
--
--
--
--
--
pF
pF
VDS=20V,ID=20A,
VGS=10V
--
Switching Characteristics
--
--
16
13
nC
nC
nC
nS
nS
nS
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Fall Time
Turn-Off Delay Time
T
d(off)
V
SD
Q
rr
t
rr
VDD=20V,
ID=10A,
RG=3.5Ω,
VGS=10V
--
--
--
15
20
14
--
--
--
Source- Drain Diode Characteristics@ T j= 25°C (unless otherwise stated)
Forward on voltage
Reverse Recovery Time
ISD=30A,VGS=0V
--
nS
V
0.8
13
22
1.2
NOTE
:
Reverse Recovery Charge
Tj=25℃,Isd=20A,
di/dt=500A/μs
nC
nS
① Repetitive rating; pulse width limited by max. junction temperature.
② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 43A, VGS =10V. Part not recommended for use
above this value
③ Pulse width ≤ 300μs; duty cycle≤ 2%.
V01
2
www.sourcechips.com
Typical
Characteristics
VGS(TH), Gate -Source Voltage (V)
ID, Drain-Source Current (A)
SM95N03A
Fig1. Typical Output Characteristics
VDS, Drain -Source Voltage (V)
Fig2. VGS(TH) Gate -Source Voltage Vs. Tj
Tj - Junction Temperature (°C)
ID, Drain-Source Current (A)
Source
Fig3. Typical Transfer Characteristics
VGS, Gate -Source Voltage (V)
Normalized On Resistance
Fig4. Normalized On-Resistance Vs. Tj
Tj - Junction Temperature (°C)
ISD, Reverse Drain Current (A)
Fig5. Typical Source-Drain Diode Forward Voltage
VSD, Source-Drain Voltage (V)
ID - Drain Current (A)
Fig6. Maximum Safe Operating Area
VDS, Drain -Source Voltage (V)
V01
3
www.sourcechips.com
Typical Characteristics
SM95N03A
VDS , Drain-Source Voltage (V)
Fig7. Typical Capacitance Vs.Drain-Source Voltage
Qg -Total Gate Charge (nC)
Fig8. Typical Gate Charge Vs.Gate-Source Voltage
ZqJC Normalized Transient
Thermal Resistance)
Pulse Width (s)
Fig9 . Normalized Maximum Transient Thermal Impedance
Fig10. Unclamped Inductive Test Circuit and waveforms
V01
4
www.sourcechips.com
VGS, Gate-Source Voltage (V)
Fig11. Switching Time Test Circuit and waveforms
C, Capacitance (pF)
Gate Charge Test Circuit & Waveform
SM95N03A
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
V01
5
www.sourcechips.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
