C
C03C
C
-30V /-6A Dual 2P Power MOSFET
-30V /-6A Dual 2P Power MOSFET
SM4807PRL
6C03C
-30
40.6
63.8
-6
V
mΩ
mΩ
A
General Description
-30V /-6A Dual 2P Power MOSFET
Very low on-resistance RDS(on) @ VGS=4.5 V
Pb-free lead plating; RoHS compliant
R
DS(on),TYP@VGS=10V
R
DS(on),TYP@VGS=4.5
I
D
V
DS
Part ID
SM4807PRL
Package Type
SOP8
Marking
4807
Tape and reel
infomation
3000
100% UIS Tested
100% Rg Tested
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
A
Pulsed Drain Current
Avalanche Current
G
G
B
Symbol
V
DS
V
GS
Maximum
-30
20
-6.0
-5.0
-9.6
-1.9
-4.4
2
1.3
-55 to 150
Units
V
±V
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
A
Repetitive avalanche energy L=0.1mH
Power Dissipation
A
mJ
W
°C
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
Symbol
t ≤ 10s
Steady State
Steady State
R
θJA
R
θJL
Typ
145
290
87
Max
217
348
139
Units
°C/W
°C/W
°C/W
V01
1
www.sourcechips.com
STATIC PARAMETERS
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
Parameter
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-
Resistance
Forward Transconductance
Diode Forward Voltage
-30V /-6A Dual 2P Power MOSFET
Conditions
I
D
= -250uA, V
GS
= 0V
VDS=-30V, VGS=0V
V
DS
= 0V, V
GS
= ±20V
V
DS
= V
GS
I
D
= 250µA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-6A
VDS=-5V, ID=-6A
IS=-1A,VGS=0V
Min
Typ
SM4807PRL
Max
Units
-30
-1
-5
±100
V
uA
nA
-1.2
-1.8
40.6
63.8
48
-0.72
-2.4
58.0
82.9
-1
-6
V
mΩ
S
V
A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Symbol
C
iss
C
oss
C
rss
R
g
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=0V, VDS=-15V, f=1MHz
Conditions
Min
Typ
Max
Units
pF
pF
pF
760
140
95
927
172
113
1.6
Ω
SWITCHING PARAMETERS
Symbol
Q
g
(10V)
Q
g
4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Parameter
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Conditions
Min
Typ
Max
Units
6.7
VGS=-10V, VDS=-15V, ID=-6A
3.35
2.24
3.2
7.5
6
21
6.75
15
9.7
nC
VGS=-10V, VDS=-15V,RL=0.75
Ω, RGEN=3Ω
ns
I
F
=-8A, dI/dt=500A/µs
I
F
=18A, dI/dt=500A/µs
ns
nC
V01
2
www.sourcechips.com
-30V /-6A Dual 2P Power MOSFET
SM4807PRL
V01
3
www.sourcechips.com
-30V /-6A Dual 2P Power MOSFET
SM4807PRL
V01
4
www.sourcechips.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
