SM9435
P-Channel Enhancement-Mode MOSFET
(-30V, -5.3A)
PRODUCT SUMMARY
V
DSS
-30V
I
D
-5.3A
R
DS(on)
(m-ohm) Max
60 @ VGS = -10 V, ID=-5.3A
90 @ VGS = -4.5V, ID=-4.2A
◆
Features
◆
Ordering Information
Ordering Number
Package
Lead Free
SM9435PRL
Halogen Free
SM9435PRG
SOP-8
4
G
1/2/3
S
5/6/7/8
D
Tape Reel
．
．
．
．
．
1
2
3
4
5
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM.
RoHS Compliant.
Pin 1 / 2 / 3: Source
Pin 4: Gate
Pin 5 / 6 / 7 / 8: Drain
Pin Assignment
Packing
SM9435X X X
(1)Package Type
(2)Packing Type
(3)Lead Free
(1) P：SOP-8
(2) R：Tape Reel
(3) G：Halogen Free；L：Lead Free
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SM9435
◆
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
b
o
Parameter
Ratings
Units
V
V
A
A
W
°C
°C/W
-30
±20
a
-5.3
-20
2.5
-55 to +150
c
Total Power Dissipation @TA=25 C
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
62.5
a:Fused current that based on wire numbers and diameter
b:Repetitive Rating: Pulse width limited by the maximum junction temperature
c:1-in2 2oz Cu PCB board
◆
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
•
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
=0V, I
D
=-250uA
V
DS
=-24V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
-30
-
-
-
-
-
-
-1
±100
V
uA
nA
•
On Characteristics
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Drain-Source On-State Resistance
V
DS
=V
GS
, I
D
=-250uA
V
GS
=10V, I
D
=-5.3A
V
GS
=-4.5V, I
D
=-4.2A
-1
-
-
-
-
-
-3
60
90
V
m
•
Dynamic Characteristics
d
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHz
-
-
-
971.77
235.06
82.97
-
-
-
pF
•
Switching Characteristics
d
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=-15V,R
L
=15 , V
GEN
=-10V,
I
D
=-1A,R
G
=6
V
DS
=-15V, I
D
=-5.3A, V
GS
=-10V
-
-
-
-
-
-
-
18.13
2.37
3.2
12.67
8.67
41.13
7
-
-
-
-
-
-
-
nS
nC
•
Drain-Source Diode Characteristics
I
S
V
SD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=-2.6A
-
-
-
-
-2.6
-1.3
A
V
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
d: Guaranteed by design: not subject to production testing
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