Si861x/2x Data Sheet
Low-Power Single and Dual-Channel Digital Isolators
Silicon Lab's family of ultra-low-power digital isolators are CMOS devices offering sub-
stantial data rate, propagation delay, power, size, reliability, and external BOM advan-
tages over legacy isolation technologies. The operating parameters of these products
remain stable across wide temperature ranges and throughout device service life for
ease of design and highly uniform performance. All device versions have Schmitt trigger
inputs for high noise immunity and only require VDD bypass capacitors.
Data rates up to 150 Mbps are supported, and all devices achieve propagation delays of
less than 10 ns. Ordering options include a choice of isolation ratings (2.5, 3.75 and 5
kV) and a selectable fail-safe operating mode to control the default output state during
power loss. All products are safety certified by UL, CSA, VDE, and CQC, and products
in wide-body packages support reinforced insulation withstanding up to 5 kV
RMS
.
Automotive Grade is available for certain part numbers. These products are built using
automotive-specific flows at all steps in the manufacturing process to ensure the robust-
ness and low defectivity required for automotive applications.
Industrial Applications
• Industrial automation systems
• Medical electronics
• Isolated switch mode supplies
• Isolated ADC, DAC
• Motor control
• Power inverters
• Communications systems
Safety Regulatory Approvals
• UL 1577 recognized
• Up to 5000 V
RMS
for 1 minute
• CSA component notice 5A approval
• IEC 60950-1, 61010-1, 60601-1 (re-
inforced insulation)
• VDE certification conformity
• Si862xxT options certified to rein-
forced VDE 0884-10
• All other options certified to IEC
60747-5-5 and reinforced 60950-1
• CQC certification approval
• GB4943.1
Automotive Applications
• On-board chargers
• Battery management systems
• Charging stations
• Traction inverters
• Hybrid Electric Vehicles
• Battery Electric Vehicles
KEY FEATURES
• High-speed operation
• DC to 150 Mbps
• No start-up initialization required
• Wide Operating Supply Voltage
• 2.5–5.5 V
• Up to 5000 V
RMS
isolation
• Reinforced VDE 0884-10, 10 kV surge-
capable (Si862xxT)
• 60-year life at rated working voltage
• High electromagnetic immunity
• Ultra low power (typical)
5 V Operation
• 1.6 mA per channel at 1 Mbps
• 5.5 mA per channel at 100 Mbps
2.5 V Operation
• 1.5 mA per channel at 1 Mbps
• 3.5 mA per channel at 100 Mbps
• Schmitt trigger inputs
• Selectable fail-safe mode
• Default high or low output (ordering
option)
• Precise timing (typical)
• 10 ns propagation delay
• 1.5 ns pulse width distortion
• 0.5 ns channel-channel skew
• 2 ns propagation delay skew
• 5 ns minimum pulse width
• Transient Immunity 50 kV/µs
• AEC-Q100 qualification
• Wide temperature range
• –40 to 125 °C
• RoHS-compliant packages
• SOIC-16 wide body
• SOIC-8 narrow body
• Automotive-grade OPNs available
• AIAG compliant PPAP documentation
support
• IMDS and CAMDS listing support
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Rev. 1.75
Si861x/2x Data Sheet
Ordering Guide
1. Ordering Guide
Industrial and Automotive Grade OPNs
Industrial-grade devices (part numbers having an “-I” in their suffix) are built using well-controlled, high-quality manufacturing flows to
ensure robustness and reliability. Qualifications are compliant with JEDEC, and defect reduction methodologies are used throughout
definition, design, evaluation, qualification, and mass production steps.
Automotive-grade devices (part numbers having an “-A” in their suffix) are built using automotive-specific flows at all steps in the manu-
facturing process to ensure robustness and low defectivity. These devices are supported with AIAG-compliant Production Part Approval
Process (PPAP) documentation, and feature International Material Data System (IMDS) and China Automotive Material Data System
(CAMDS) listing. Qualifications are compliant with AEC-Q100, and a zero-defect methodology is maintained throughout definition, de-
sign, evaluation, qualification, and mass production steps.
Table 1.1. Ordering Guide for Valid OPNs
1, 2, 4
Number Number
of Inputs of Inputs Max Data
Rate
VDD2
VDD1
(Mbps)
Side
Side
1
1
1
1
1
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Ordering Part Number
(OPN)
Si8610BB-B-IS
Si8610BC-B-IS
Si8610EC-B-IS
Si8610BD-B-IS
Si8610ED-B-IS
Si8620BB-B-IS
Si8620EB-B-IS
Si8620BC-B-IS
Si8620EC-B-IS
Si8620BD-B-IS
Si8620ED-B-IS
Si8621BB-B-IS
Si8621BC-B-IS
Si8621EC-B-IS
Si8621BD-B-IS
Si8621ED-B-IS
Si8622BB-B-IS
Si8622EB-B-IS
Si8622BC-B-IS
Si8622EC-B-IS
Si8622BD-B-IS
Si8622ED-B-IS
Automotive
OPNs
5, 6
Default
Output
State
Low
Low
High
Low
High
Low
High
Low
High
Low
High
Low
Low
High
Low
High
Low
High
Low
High
Low
High
Isolation
Rating
(kV)
2.5
3.75
3.75
5.0
5.0
2.5
2.5
3.75
3.75
5.0
5.0
2.5
3.75
3.75
5.0
5.0
2.5
2.5
3.75
3.75
5.0
5.0
Package
Si8610BB-AS
Si8610BC-AS
Si8610EC-AS
Si8610BD-AS
Si8610ED-AS
Si8620BB-AS
Si8620EB-AS
Si8620BC-AS
Si8620EC-AS
Si8620BD-AS
Si8620ED-AS
Si8621BB-AS
Si8621BC-AS
Si8621EC-AS
Si8621BD-AS
Si8621ED-AS
Si8622BB-AS
Si8622EB-AS
Si8622BC-AS
Si8622EC-AS
Si8622BD-AS
Si8622ED-AS
SOIC-8
SOIC-8
SOIC-8
WB SOIC-16
WB SOIC-16
SOIC-8
SOIC-8
SOIC-8
SOIC-8
WB SOIC-16
WB SOIC-16
SOIC-8
SOIC-8
SOIC-8
WB SOIC-16
WB SOIC-16
SOIC-8
SOIC-8
SOIC-8
SOIC-8
WB SOIC-16
WB SOIC-16
Product Options with Reinforced VDE 0884-10 Rating with 10 kV Surge Capability
Si8620BT-IS
Si8620ET-IS
Si8620BT-AS
Si8620ET-AS
2
2
0
0
150
150
Low
High
5.0
5.0
WB SOIC-16
WB SOIC-16
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Rev. 1.75 | 2
Si861x/2x Data Sheet
Ordering Guide
Ordering Part Number
(OPN)
Si8621BT-IS
Si8621ET-IS
Si8622BT-IS
Si8622ET-IS
Automotive
OPNs
5, 6
Number Number
of Inputs of Inputs Max Data
Rate
VDD2
VDD1
(Mbps)
Side
Side
1
1
1
1
1
1
1
1
150
150
150
150
Default
Output
State
Low
High
Low
High
Isolation
Rating
(kV)
5.0
5.0
5.0
5.0
Package
Si8621BT-AS
Si8621ET-AS
Si8622BT-AS
Si8622ET-AS
WB SOIC-16
WB SOIC-16
WB SOIC-16
WB SOIC-16
Note:
1. All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifica-
tions and peak solder temperatures.
2. “Si” and “SI” are used interchangeably.
3. An "R" at the end of the part number denotes tape and reel packaging option.
4. The temperature ranges is –40 to +125 °C.
5. Automotive-Grade devices (with an "–A" suffix) are identical in construction materials, topside marking, and electrical parameters
to their Industrial-Grade (with an "–I" suffix) version counterparts. Automotive-Grade products are produced utilizing full automo-
tive process flows and additional statistical process controls throughout the manufacturing flow. The Automotive-Grade part num-
ber is included on shipping labels.
6. In the top markings of each device, the Manufacturing Code represented by either “RTTTTT” or “TTTTTT” contains as its first
character a letter in the range N through Z to indicate Automotive-Grade.
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Table of Contents
1. Ordering Guide
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. 5
. 6
. 8
. 8
. 8
. 8
. 8
. 8
. 9
2. System Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Theory of Operation .
2.2 Eye Diagram.
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3. Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1 Device Startup .
3.2 Undervoltage Lockout
3.3 Layout Recommendations .
3.3.1 Supply Bypass . . .
3.3.2 Output Pin Termination.
3.4 Fail-Safe Operating Mode .
3.5 Typical Performance Characteristis .
4. Electrical Specifications
. . . . . . . . . . . . . . . . . . . . . . . . . . 11
5. Pin Descriptions (Wide-Body SOIC) . . . . . . . . . . . . . . . . . . . . . . 28
6. Pin Descriptions (Narrow-Body SOIC) . . . . . . . . . . . . . . . . . . . . . 29
7. Package Outline: 16-Pin Wide Body SOIC. . . . . . . . . . . . . . . . . . . .
9. Package Outline: 8-Pin Narrow Body SOIC
10. Land Pattern: 8-Pin Narrow Body SOIC
12. Top Marking: 8-Pin Narrow Body SOIC
30
8. Land Pattern: 16-Pin Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . 32
. . . . . . . . . . . . . . . . . . . 33
. . . . . . . . . . . . . . . . . . . . 34
35
37
. . . . . . . . . . . . . . . . . . . . 36
11. Top Marking: 16-Pin Wide Body SOIC. . . . . . . . . . . . . . . . . . . . .
13. Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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System Overview
Si861x/2x Data Sheet
2. System Overview
2.1 Theory of Operation
The operation of an Si861x/2x channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This
simple architecture provides a robust isolated data path and requires no special considerations or initialization at start-up. A simplified
block diagram for a single Si861x/2x channel is shown in the figure below.
Figure 2.1. Simplified Channel Diagram
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier. Referring to the trans-
mitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The Receiver contains a demodulator that de-
codes the input state according to its RF energy content and applies the result to output B via the output driver. This RF on/off keying
scheme is superior to pulse code schemes as it provides best-in-class noise immunity, low power consumption, and improved immunity
to magnetic fields. See the following figure for more details.
Figure 2.2. Modulation Scheme
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